Abstract: A system and method for efficient power management of an integrated circuit are described. In various implementations, a computing system includes an integrated circuit, multiple voltage regulators, and circuitry that detects when current drawn from a power rail from one of the multiple voltage regulators exceeds a limit. Upon detection, a single global alarm signal is asserted and conveyed to the integrate circuit. The integrated circuit includes at least a first group of functional blocks sharing a first power rail and a second group of functional blocks sharing a second power rail. When the global alarm signal is asserted, the functional blocks of the first group and the second group perform steps to immediately reduce power consumption. In order to maintain performance and satisfy a quality of service (QoS) parameter, a power management controller of the integrated circuit reassigns power limits shortly thereafter.

Abstract: In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor includes a first power rail, a first component coupled to the first power rail, and a compensation control unit. The compensation control unit is to: detect a request to change a voltage level of the first power rail by a first voltage change amount; in response to detecting the request, determine that the first voltage change amount exceeds a first threshold level associated with the first component; and in response to determining that the first voltage change amount exceeds the first threshold level, initiate a first compensation action prior to changing the voltage level of the first power rail. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.

Abstract: One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.

Abstract: Methods, systems, and apparatuses relating to package on package memory refresh and self-refresh rate management are described. In one embodiment, an apparatus includes a processor die, a dynamic memory die mounted to and overlapping the processor die, a first thermal sensor of the processor die disposed adjacent to a first hot spot from a first type of workload and a second thermal sensor of the processor die disposed adjacent to a second hot spot from a second type of workload, and a hardware control circuit of the processor die to cause a refresh of a capacitor of the dynamic memory die when either of an output of the first thermal sensor exceeds a first threshold value and an output of the second thermal sensor exceeds a second threshold value.

Abstract: In an embodiment, a processor includes at least one execution unit to execute instructions, and an interrupt generation unit. The interrupt generation unit may be to: receive a plurality of values indicating thermal status values for a memory unit at multiple points in time across a first time window; determine a running average value based on the plurality of values indicating thermal status values in the memory unit; and in response to a determination that the running average value has exceeded a high thermal status threshold value, generate a thermal interrupt indicating a high thermal status event in the processor. Other embodiments are described and claimed.

Abstract: In an embodiment, a processor includes a first power rail, a first component coupled to the first power rail, and a compensation control unit. The compensation control unit is to: detect a request to change a voltage level of the first power rail by a first voltage change amount; in response to detecting the request, determine that the first voltage change amount exceeds a first threshold level associated with the first component; and in response to determining that the first voltage change amount exceeds the first threshold level, initiate a first compensation action prior to changing the voltage level of the first power rail. Other embodiments are described and claimed.

Abstract: Methods, systems, and apparatuses relating to package on package memory refresh and self-refresh rate management are described. In one embodiment, an apparatus includes a processor die, a dynamic memory die mounted to and overlapping the processor die, a first thermal sensor of the processor die disposed adjacent to a first hot spot from a first type of workload and a second thermal sensor of the processor die disposed adjacent to a second hot spot from a second type of workload, and a hardware control circuit of the processor die to cause a refresh of a capacitor of the dynamic memory die when either of an output of the first thermal sensor exceeds a first threshold value and an output of the second thermal sensor exceeds a second threshold value.

Abstract: Dynamic monitoring of current draw by a memory device or memory subsystem can enable a power management system to adjust a memory access performance parameter based on monitored power usage. The system can generate a power usage characterization for the memory device and/or memory subsystem based on monitoring current draw for a known pattern, and then subsequently use the power usage characterization to determine how to adjust the memory access performance parameter.

Abstract: Methods, systems, and apparatuses relating to package on package memory refresh and self-refresh rate management are described. In one embodiment, an apparatus includes a processor die, a dynamic memory die mounted to and overlapping the processor die, a first thermal sensor of the processor die disposed adjacent to a first hot spot from a first type of workload and a second thermal sensor of the processor die disposed adjacent to a second hot spot from a second type of workload, and a hardware control circuit of the processor die to cause a refresh of a capacitor of the dynamic memory die when either of an output of the first thermal sensor exceeds a first threshold value and an output of the second thermal sensor exceeds a second threshold value.

Abstract: One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.

Abstract: Power gating control architectures. A memory device having at least a memory array and input/output (I/O) lines terminated on the memory device with termination circuitry coupled to receive a termination supply voltage (Vtt) with power gating circuitry to selectively gate the termination supply voltage in response to a power gating control signal (VttControl) is coupled with a processing core coupled with the memory device, the processing core to selectively assert and deassert the VttControl signal.

Abstract: One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.

Abstract: In an embodiment, a processor includes a first domain with at least one core to execute instructions and a second domain coupled to the first domain and including at least one non-core circuit. These domains can operate at independent frequencies, and a power control unit coupled to the domains may include a thermal logic to cause a reduction in a frequency of the first domain responsive to occurrence of a thermal event in the second domain. Other embodiments are described and claimed.

Abstract: One embodiment of an apparatus includes a semiconductor chip having a processor and an on-die non-volatile storage resource. The on-die non-volatile storage may store different, appropriate performance related information for different configurations and usage cases of the processor for a same performance state of the processor.

Abstract: Dynamic monitoring of current draw by a memory device or memory subsystem can enable a power management system to adjust a memory access performance parameter based on monitored power usage. The system can generate a power usage characterization for the memory device and/or memory subsystem based on monitoring current draw for a known pattern, and then subsequently use the power usage characterization to determine how to adjust the memory access performance parameter.

Abstract: In an embodiment, a processor includes a first domain with at least one core to execute instructions and a second domain coupled to the first domain and including at least one non-core circuit. These domains can operate at independent frequencies, and a power control unit coupled to the domains may include a thermal logic to cause a reduction in a frequency of the first domain responsive to occurrence of a thermal event in the second domain. Other embodiments are described and claimed.

Abstract: An apparatus that includes a semiconductor chip having a processor and an on-die non-volatile storage resource is described. The on-die non volatile storage is to store different, appropriate performance related information for different configurations and/or usage cases of the processor for a same performance state of the processor.