Abstract: An apparatus and method amplify a signal for use in a wireless network. The apparatus includes a power amplifier, an envelope modulator, a tunable matching network (TMN), and a controller. The power amplifier outputs the signal at an output power. The envelope modulator controls a bias setting for the power amplifier. The TMN includes a plurality of immittance elements. The controller is operably connected the envelope modulator and the TMN. The controller identifies a desired value for the output power of the power amplifier, controls the output power of the power amplifier by modifying the bias setting of the power amplifier, and sets a number of the plurality of immittance elements based on the bias setting of the power amplifier.

Abstract: An apparatus and method manage impedance values in a radio in a wireless network. The apparatus includes a tunable matching network (TMN) positioned on a path between a transceiver and an antenna. The TMN includes a plurality of immittance elements. A voltage standing wave ratio (VSWR) detector is configured to detect a ratio of a signal passing the VSWR detector and a signal reflected from the TMN. A control circuit is configured to identify an operating setting for the radio, set a number of the immittance elements based on the operating setting, monitor the ratio detected by the VSWR detector, and modify a setting of at least one of the immittance elements based on the ratio detected.

Abstract: Disclosed is a method and system for processing the tasks performed by an IC layout processing tool in parallel. In some approaches, the IC layout is divided into a plurality of layout portions and one or more of the layout portions are processed in parallel, where geometric select operations are performed in which data for different layout portions may be shared between different processing entities. One approach includes the following actions: select phase one operation for performing initial select actions within layout portions; distributed regioning action for local regioning; distributed regioning action for global regioning and binary select; count select aggregation for count-based select operations; and select phase two operations for combining results of selecting of internal shapes and interface shapes.

Abstract: An apparatus and method for amplifying a transmission signals in multiple modes and multiple bands. The apparatus includes a tunable power amplifying module adapted to receive a plurality of signal types comprising multiple modes and multiple bands. The tunable power amplifying module includes a first and second power amplifier stages and a number of tunable matching networks configured to optimize an impedance value based on the mode and band of the signal to be amplified.

Abstract: An apparatus and method for amplifying a transmission signals in multiple modes and multiple bands. The apparatus includes a tunable power amplifying module adapted to receive a plurality of signal types comprising multiple modes and multiple bands. The tunable power amplifying module includes a first and second power amplifier stages and a number of tunable matching networks configured to optimize an impedance value based on the mode and band of the signal to be amplified.

Abstract: An apparatus and method amplify a signal for use in a wireless network. The apparatus includes a power amplifier, an envelope modulator, a tunable matching network (TMN), and a controller. The power amplifier outputs the signal at an output power. The envelope modulator controls a bias setting for the power amplifier. The TMN includes a plurality of immittance elements. The controller is operably connected the envelope modulator and the TMN. The controller identifies a desired value for the output power of the power amplifier, controls the output power of the power amplifier by modifying the bias setting of the power amplifier, and sets a number of the plurality of immittance elements based on the bias setting of the power amplifier.

Abstract: An apparatus and method manage impedance values in a radio in a wireless network. The apparatus includes a tunable matching network (TMN) positioned on a path between a transceiver and an antenna. The TMN includes a plurality of immittance elements. A voltage standing wave ratio (VSWR) detector is configured to detect a ratio of a signal passing the VSWR detector and a signal reflected from the TMN. A control circuit is configured to identify an operating setting for the radio, set a number of the immittance elements based on the operating setting, monitor the ratio detected by the VSWR detector, and modify a setting of at least one of the immittance elements based on the ratio detected.

Abstract: The present disclosure relates generally to digitally tunable impedance matching networks. In one example, a digitally tunable impedance matching network is configured to produce an overall reactance value of approximately X, and includes multiple reactive components that are configured to produce a reactance value in the range of approximately zero to X with a minimum resolution of approximately X/2n.

Abstract: An apparatus and method for amplifying a transmission signals in multiple modes and multiple bands. The apparatus includes a tunable power amplifying module adapted to receive a plurality of signal types comprising multiple modes and multiple bands. The tunable power amplifying module includes a first and second power amplifier stages and a number of tunable matching networks configured to optimize an impedance value based on the mode and band of the signal to be amplified.

Abstract: A lockable MEMS switching architecture provided having a clutch assembly, a switching member, and an actuator. The clutch assembly has one or more engagement features located in proximity to the switching member—particularly one or more receiving features located upon the switching member. The clutch assembly is actuated to disengage the engagement features from the receiving features. The switching member is actuated to move in relation to the clutch assembly. Once the switching member is in a desired position, the clutch assembly is de-actuated, causing the engagement features to re-engage with the switching member, thereby restricting its further movement.

Abstract: The present disclosure relates generally to tunable impedance matching networks and methods for the use of such networks. In one example, a method includes identifying state information about a mobile device, accessing a memory to identify a configuration of an impedance matching network based on the state information, and applying the values from the configuration to the impedance matching network.

Abstract: The present disclosure relates generally to digitally tunable impedance matching networks. In one example, a digitally tunable impedance matching network is configured to produce an overall reactance value of approximately X, and includes multiple reactive components that are configured to produce a reactance value in the range of approximately zero to X with a minimum resolution of approximately X/2n.

Abstract: The present disclosure relates generally to digitally tunable impedance matching networks. In one example, a digitally tunable impedance matching network is configured to produce an overall reactance value of approximately X, and includes multiple reactive components that are configured to produce a reactance value in the range of approximately zero to X with a minimum resolution of approximately X/2n.

Abstract: The present disclosure relates generally to tunable impedance matching networks and methods for the use of such networks. In one example, a method includes identifying state information about a mobile device, accessing a memory to identify a configuration of an impedance matching network based on the state information, and applying the values from the configuration to the impedance matching network.

Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer.

Abstract: The present disclosure relates generally to digitally tunable impedance matching networks. In one example, a digitally tunable impedance matching network is configured to produce an overall reactance value of approximately X, and includes multiple reactive components that are configured to produce a reactance value in the range of approximately zero to X with a minimum resolution of approximately X/2n.

Abstract: A lockable MEMS switching architecture provided having a clutch assembly, a switching member, and an actuator. The clutch assembly has one or more engagement features located in proximity to the switching member - particularly one or more receiving features located upon the switching member. The clutch assembly is actuated to disengage the engagement features from the receiving features. The switching member is actuated to move in relation to the clutch assembly. Once the switching member is in a desired position, the clutch assembly is de-actuated, causing the engagement features to re-engage with the switching member, thereby restricting its further movement.

Abstract: The present invention describes a processes that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plate RIE dry etch processes, advanced deep and inductively coupled plasma RIE processes. Three embodiments for connecting the chamber to the cavity from the top side of the substrate, e.g. by using pilot openings formed using at least a portion of the mesh as an etch mask, by forming the vent openings using at least a portion of the mesh as an etch mask, or by having the chamber intersect the vent openings as the chamber is being formed, illustrate how the disclosed process may be modified. By forming the cavity on the back side of the substrate, the depth of the vent holes is decreased. Additionally, using at least a portion of the micro-machined mesh as an etch mask for the vent holes makes the process self-aligning.

Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer.

Abstract: A process comprises reducing the thickness of a substrate carrying a plurality of devices, with at least certain of the devices having a micro-machined mesh. A carrier wafer is attached to the back side of the substrate and the fabrication of the devices is completed from the top side of the substrate. Thereafter the plurality of devices is singulated. Various alternative embodiments are disclosed which demonstrate that the thinning of the wafer may occur at different times during the process of fabricating the MEMS devices such as before the mesh is formed or after the mesh is formed. Additionally, the use of carrier wafers to support the thinned wafer enables process steps to be carried out on the side opposite from the side having the carrier wafer. The various alternative embodiments demonstrate that the side carrying the carrier wafer can be varied throughout the process.