Abstract: A field effect transistor includes a gate electrode, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer is located on the surface of the gate electrode, and the channel layer is located on the surface of the insulating layer away from the gate electrode. The source electrode and the drain electrode are spaced apart from each on the surface of the channel layer away from the insulating layer. The source electrode and the drain electrode are one-dimensional structures. The present application further provides a method for making the field effect transistor.

Abstract: A field effect transistor includes a gate electrode, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer is located on the surface of the gate electrode, and the channel layer is located on the surface of the insulating layer away from the gate electrode. The source electrode and the drain electrode are spaced apart from each on the surface of the channel layer away from the insulating layer. The source electrode and the drain electrode are one-dimensional structures. The present application further provides a method for making the field effect transistor and a method for measuring an interface resistance of the field effect transistor.