Abstract: A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer. The third layer is of a third material. The third material includes the first ceramic material or a second ceramic material. The third material does not adhere to the first polymer or the second polymer. The third material does adhere to the first ceramic material or the second ceramic material of the second layer.

Abstract: Porous plugs for gas delivery in substrate supports and substrate supports and substrate processing chambers incorporating same are provided herein. In some embodiments, a porous plug for use in a substrate support includes: a porous central passageway; and a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug, wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway. In some embodiments, one or more o-ring retaining grooves can be formed about the outer surface of the solid outer shell.

Abstract: Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest against an electrostatic chuck; an upper guide comprising a top end, a bottom end, and a first opening extending from the top end to the bottom end, wherein the shaft is disposed and axially movable through the first opening; a lower guide comprising a top end, a bottom end, and a second opening and a third opening extending from the top end to the bottom end, wherein the third opening is larger than the second opening, and wherein the shaft is disposed and axially movable through the second opening and the third opening; and a biasing mechanism coupled to the shaft and configured to bias the lift pin against the electrostatic chuck.

Abstract: Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.

Abstract: Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (IR) sensor mounted to the chamber wall. The IR sensor is mounted such that it can be oriented to receive an IR wave from targets within the process chamber through a view port in the chamber wall to detect a temperature of a surface inside the chamber, or to receive an IR wave from a target outside of the process chamber to detect an atmospheric temperature or a temperature of an exterior surface of the process chamber. As the orientation of the IR sensor is controllable to receive the IR wave from selected directions, it may be used to detect the temperature of various targets inside and outside the process chamber. The obtained temperature information is useful to improve overall chamber matching, processing throughput, and uniformity.

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

Abstract: Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (IR) sensor mounted to the chamber wall. The IR sensor is mounted such that it can be oriented to receive an IR wave from targets within the process chamber through a view port in the chamber wall to detect a temperature of a surface inside the chamber, or to receive an IR wave from a target outside of the process chamber to detect an atmospheric temperature or a temperature of an exterior surface of the process chamber. As the orientation of the IR sensor is controllable to receive the IR wave from selected directions, it may be used to detect the temperature of various targets inside and outside the process chamber. The obtained temperature information is useful to improve overall chamber matching, processing throughput, and uniformity.

Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.