Abstract: The present disclosure provides an electronic package. The electronic package includes an antenna structure having a first antenna and a second antenna at least partially covered by the first antenna. The electronic package also includes a directing element covering the antenna structure. The directing element has a first portion configured to direct a first electromagnetic wave having a first frequency to transmit via the first antenna and a second portion configured to direct a second electromagnetic wave having a second frequency different from the first frequency to transmit via the second antenna. A method of manufacturing an electronic package is also provided.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.

Abstract: A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 ?m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

Abstract: For sidelink vehicle-to-everything (V2X) transmission, a first user equipment (UE) obtains time-and-frequency resources that are bounded by two subchannel boundaries and two slot boundaries. The first UE transmits encoded control information to a second UE in a Physical Sidelink Control Channel (PSCCH) that occupies a first portion of the time-and-frequency resources starting from a lowest resource block (RB) in a lowest subchannel and from an earliest symbol available for sidelink control and data transmission. The first UE further transmits encoded data to the second UE in a Physical Sidelink Shared Channel (PSSCH) that occupies a second portion of the time-frequency resources. The second portion includes (a) a first set of RBs in the same symbols as the PSCCH and not used by the PSCCH, and (b) a second set of RBs in symbols not used by the PSCCH.

Abstract: A heat pump system, a heat management method and a vehicle are provided. The heat pump system includes an integrated heat exchanger integrated with a superconducting liquid flow passage and a refrigerant flow passage. The refrigerant flow passage is provided inside an on-board refrigerant circulation loop and is used for cooling and/or heating to adjust the temperature within a passenger compartment of a vehicle. The superconducting liquid flow passage is in communication with a motor heat dissipating conduit, for absorbing the heat generated by an on board motor and transferring the heat to the integrated heat exchanger by means of phase change heat transfer. The heat pump system can increase the energy utilization rate for the vehicle and reduce the allowable ambient temperature of the heat pump system.

Abstract: The present disclosure provides apparatuses and computer readable media for measuring sub-epidermal moisture in patients to determine damaged tissue for clinical intervention. The present disclosure also provides methods for determining damaged tissue.

Abstract: A method for encoding a video is provided, wherein encoding the video comprises classifying samples of a first picture, determining, for at least one part of the first picture, a first filter based on said classification, said first filter being used for a first encoding operation of the first picture or of a second picture, determining a second filter based on said classification, said second filter being used for a second encoding operation of the first picture or of the second picture. An apparatus for encoding a video, decoding method and apparatus are also provided.

Abstract: A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 ?m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: Encoding or decoding syntax information associated with video information can involve identifying a coding context associated with a syntax element of a current coding unit of the video information, wherein the identifying occurs without using a syntax element of a neighboring block, and encoding or decoding the syntax element of the current coding unit based on the coding context.

Abstract: A decoding method is presented. An illumination compensation parameter is first determined for a current block of a picture. The illumination compensation parameter is determined from one or more illumination compensation parameters or from one or more reconstructed samples of at least one spatially neighbor block only in the case where said at least one spatially neighbor block belongs to the same local illumination compensation group as the current block, called current local illumination compensation group. Finally, the current block is reconstructed using the determined illumination compensation parameter.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a carrier, an antenna element and a cladding element. The carrier defines a first area and a second area adjacent to the first area. The antenna element is in the first area. The cladding element covers the antenna element and is configured for enhancing antenna gain of the antenna element. The second area is exposed from the cladding element and is distant from the antenna element.

Abstract: A video codec can involve processing video information based on a motion model involving a coding unit including a plurality of sub-blocks, such as an affine motion model, to produce motion compensation information, obtaining a local illumination compensation model, and encoding or decoding the video information based on the motion compensation information and the local illumination compensation model.

Abstract: The present invention provides a detection reagent and therapeutic target for B cell tumor after targeted therapy and related applications. The reagent composition comprises 3 groups of antibodies, with the first group of antibodies including an anti-CD38 antibody, an anti-CD10 antibody, an anti-CD34 antibody, an anti-CD19 antibody, an anti-CD24 an antibody, an anti-CD20 antibody, an anti-CD81 antibody, an anti-CD45 antibody; the second group of antibodies including an anti-CD38 antibody, an anti-CD10 antibody, an anti-CD34 antibody, an anti-CD19 antibody, an anti-CD20 antibody, an anti-CD72 antibody, an anti-CD45 antibody; and the third group of antibodies including an anti-cytoplasmic CD79a antibody. The reagent composition of the present invention can be applied for the detection of B-lymphocyte tumors after targeted therapy by flow cytometry.

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: A semiconductor device includes a first gate structure disposed on a substrate and extending in a first direction. The first gate structure includes a first gate electrode, a first cap insulating layer disposed over the first gate electrode, first sidewall spacers disposed on opposing side faces of the first gate electrode and the first cap insulating layer and second sidewall spacers disposed over the first sidewall spacers. The semiconductor device further includes a first protective layer formed over the first cap insulating layer, the first sidewall spacers and the second sidewall spacers. The first protective layer has a ?-shape having a head portion and two leg portions in a cross section along a second direction perpendicular to the first direction.

Abstract: An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.

Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.