Abstract: The present disclosure relates to a positive electrode material for a lithium ion battery and its preparation. The positive electrode material in accordance with the present disclosure has an intrinsic specific surface area of 5-13 m2/g. The positive electrode material in accordance with the present disclosure has an intrinsic specific surface area and an intrinsic pore size within the required ranges. In this regard, the positive electrode material in accordance with the present disclosure has excellent particle strength, excellent Li ion transference ability, and good resistance to electrolyte erosion. When used in lithium batteries, it may impart the batteries with excellent rate performance and cycle performance. The present disclosure also relates to a method for preparing the positive electrode material.

Abstract: A sodium-containing oxide positive electrode material and a preparation method therefor and use thereof are disclosed. Also disclosed are a positive electrode plate and uses thereof.

Abstract: Provided is a positive electrode material for a lithium ion battery, having the following general formula I: Li1+aNixCoyMnzMcM?dO2?bAb general formula I, wherein ?0.05?a?0.3, 0.8?x?1, 0?y?0.2, 0?z?0.2, 0?c?0.01, 0?d?0.01, x+y+z+c+d=1, and 0?b?0.05; M and M? are different from each other and each independently selected from at least one of La, Cr, Mo, Ca, Fe, Ti, Zn, Y, Zr, W, Nb, V, Mg, B, Al, Sr, Ba and Ta, A is selected from at least one of F, Cl, Br, I and S, and the number of crystallite boundaries N in primary particles of the positive electrode material is from 10.5 to 14.5, wherein N is calculated according to Equation I: N=DS/DX Equation I, wherein DS is an average size of the primary particles, as measured from scanning electron microscope (SEM) image of cross section of the positive electrode material, and DX is an average size of crystallites in the primary particles of the positive electrode material, as measured by an XRD test and calculated by the Scherrer equation.

Abstract: The present disclosure provides an antenna, a method for manufacturing an antenna and a communication system. The antenna includes: a dielectric layer; a first electrode having at least one first opening therein; at least one radiating structure on a side of the dielectric layer different from that with the first electrode thereon; an orthographic projection of the radiating structure on the dielectric layer is located in that of the first opening on the dielectric layer; each radiating structure includes a second electrode and a third electrode, orthographic projections of the second and third electrodes on the dielectric layer are located in that of the first opening on the dielectric layer, the orthographic projections of the second and third electrodes on the dielectric layer are not overlapped; at least one first feed line and at least one second feed line.

Abstract: A distributed system is run in a device in the method. The distributed system includes a system service, a first-type service located at an upper layer of the system service, and a second-type service located at an upper layer of the first-type service and having an interface display function. Both the first-type service and the second-type service are atomic services. A second device migrates a teaching video to a first device, and the first device plays the teaching video. A second-type service in the first device may call a first-type service in another device, to control the another device to capture a user action picture video, process the teaching video and the user action picture video to obtain teaching guidance, and play the teaching guidance.

Abstract: The present disclosure provides a thin film sensor, a thin film sensor array and an electronic device. The thin film sensor has a functional area and a non-functional area surrounding the functional area, and includes: a dielectric substrate having a first surface and a second surface which are oppositely arranged; a first conductive layer located on the first surface of the dielectric substrate and including a first conductive structure arranged in the functional area; a second conductive layer located on the second surface of the dielectric substrate; a first light-shielding layer located on the first surface of the dielectric substrate, the first light-shielding layer includes a first light-shielding structure at least arranged in the non-functional area, the first light-shielding structure has the same pattern as the first conductive structure.

Abstract: The present disclosure provides a pixel driving circuit and a display panel. The pixel drive circuit includes: a data writing sub-circuit, a threshold compensation sub-circuit, a driving sub-circuit and a storage sub-circuit, the data writing sub-circuit includes a fourth transistor, which includes a first electrode connected with a data line, a second electrode connected with a first terminal of the driving sub-circuit, and a control electrode connected with a first scan signal line, and the fourth transistor is an oxide thin film transistor; the threshold compensation sub-circuit is configured to compensate a threshold voltage of the driving sub-circuit in response to a second scan signal; the storage sub-circuit is configured to store a data voltage signal; the driving sub-circuit is configured to provide a driving current for a light emitting device to be driven according to voltages of the first terminal and a control terminal thereof.

Abstract: The present disclosure relates to the technical field of lithium ion battery, and discloses a Lithium-Manganese-rich material and a preparation method and a use thereof.

Abstract: Disclosed is a filtering device. The device includes a main body part and a filter element assembly, where the main body part has a mounting cavity for accommodating the filter element assembly, further includes a base and a screen cover arranged as a cover of the base, and at least one rack for fixing the filter element assembly is disposed on an inner wall of the screen cover and/or the base; and the filter element assembly includes a folded filter element arranged in a folded shape, and a rubber strip arranged on the folded filter element for maintaining the shape of the folded filter element to facilitate quick assembly and disassembly of the folded filter element. Further, the screen cover and the base are connected through various snap-fit assemblies, without requiring additional connecting members for fixing them, which is convenient for disassembly and assembly, and has a simple structure.

Abstract: The present invention relates to a positive electrode material comprising a core material and a coating layer coated on the surface of the core material, the core material comprises nickel hydroxide, and the coating layer comprises a tetravalent cobalt compound; and based on the weight of the coating layer, the content of the tetravalent cobalt compound is no less than 45 wt %. The present invention also relates to a preparation method for the positive electrode material. The present invention further relates to an alkaline secondary battery containing the positive electrode material.

Abstract: An antenna and an antenna system. The antenna includes: a first dielectric layer (1) having a first surface and a second surface, which are arranged opposite each other in a thickness direction thereof; a radiation patch (2), which is arranged on the first surface of the first dielectric layer; and a first electrode layer (3), which is arranged on the second surface of the first dielectric layer, and at least partially overlaps with the orthographic projection of the radiation patch on the second surface, wherein the first electrode layer has inner recesses (31, 32), and openings of the inner recesses face the radiation patch. The orthographic projection of at least part of a radiation edge of the radiation patch on the first dielectric layer at least partially overlaps with the orthographic projections of the inner recesses on the first surface.

Abstract: A distributed system is run in a device in the method. The distributed system includes a system service, a first-type service located at an upper layer of the system service, and a second-type service located at an upper layer of the first-type service and having an interface display function. Both the first-type service and the second-type service are atomic services. A second device migrates a teaching video to a first device, and the first device plays the teaching video. A second-type service in the first device may call a first-type service in another device, to control the another device to capture a user action picture video, process the teaching video and the user action picture video to obtain teaching guidance, and play the teaching guidance.

Abstract: In an example embodiment, a single machine learned model that allows for ranking of entities across all of the different combinations of node types and edge types is provided. The solution calibrates the scores from Edge-FPR models to a single scale. Additionally, the solution may utilize a per-edge type multiplicative factor dictated by the true importance of an edge type, which is learned through a counterfactual experimentation process. The solution may additionally optimize on a single, common downstream metric, specifically downstream interactions that can be compared against each other across all combinations of node types and edge types.

Abstract: A network access method includes receiving, by a first access point, a first network identifier and a first password of a second access point from a server, setting, by the first access point, a first network based on a first network identifier and a first password of the second access point, sending, by an intelligent device, a first network connection request, establishing, by the first access point, a first network connection between the first access point and the intelligent device in response to the first network connection request, sending, by the first access point, a second network identifier or a second password of the first access point to the intelligent device by the first network connection, and sending, by the intelligent device, a second network connection request to the first access point based on the second network identifier or the second password of the first access point.

Abstract: A cell structure of a silicon carbide MOSFET device, comprising a drift region (3) located on a substrate layer (2), a second conducting type well region (4) and a first JFET region (51) that are located in the drift region (3), an enhancement region located within a surface of the well region (4), a gate insulating layer (8) located on a first conducting type enhancement region (6), the well region (4) and the first JFET region (51) and being in contact therewith at the same time, a gate (9) located on the gate insulating layer, source metal (10) located on the enhancement region, Schottky metal (11) located on a second conducting type enhancement region (7) and the drift region (3), a second JFET region (52) located on a surface of the drift region (3) between the Schottky metals (11), and drain metal (12).

Abstract: A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type substrate (2). A main trench is provided in the surface of the first conductivity type drift region (3); a Schottky metal (4) is provided on the bottom and sidewalls of the main trench; a second conductivity type well region (7) is provided in the surface of the first conductivity type drift region (3) and around the main trench; a source region (8) is provided in the surface of the well region (7); a source metal (10) is provided above the source region (8); a gate insulating layer (6) and a gate (5) split into two parts are provided above the sides of the source region (8), the well region (7), and the first conductivity type drift region (3) close to the main trench.

Abstract: Disclosed is a cellular structure of a silicon carbide MOSFET device, and a silicon carbide MOSFET device. The cellular structure comprises: second conductive well regions located on two sides of the cellular structure and arranged within the surface of a drift layer, first conductive source regions located within the surfaces of the well regions, and a gate structure located at the center of the cellular structure and in contact with the source regions, the well regions, and the drift layer. The cellular structure further comprises a source metal layer located above the source regions and forming ohmic contact with the source regions; on two sides of the cellular structure, side trenches are formed downwardly on regions of the drift layer that are not covered by the well regions; Schottky metal layers forming Schottky contact with the drift layer below the side trenches are arranged in the side trenches.

Abstract: A bisphenol A derivative, a preparation method therefor and use thereof in photolithography are provided. The compounds feature simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high thermal stability. They do not precipitate during baking and are not easily denatured during photolithography. The negative molecular glass photoresists have good film-forming property, high thermal stability, less proneness to properties varying during storage, and low viscosity, no need for additional solvents for dilution during use. After exposure at UV wavelength of 365 nm, the exposed pattern shows high contrast, excellent resolution and good sensitivity, and can present the lithographic line width of 3.5 ?m.