Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. The isolation structure includes a curved bottom surface.

Abstract: An optical lens assembly includes a stop and includes, in order from an object side to an image side: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. A half of a maximum field of view of the optical lens assembly is HFOV, a distance from an image-side surface of the seventh lens to an image plane on an optical axis is BFL, a radius of curvature of an object-side surface of the fourth lens is R7, a radius of curvature of an image-side surface of the fourth lens is R8, and the following conditions are satisfied: 45<HFOV*BFL, and ?1032.81<R7*R8<?298.89.

Abstract: An optical lens assembly includes, in order from the object side to the image side: a stop, a first lens element, a second lens element, a third lens element, and an infrared bandpass filter. An entrance pupil diameter of the optical lens assembly is EPD, a half of a maximum field of view of the optical lens assembly is HFOV, and the following condition is satisfied: 0.59<EPD/tan(HFOV)<1.33.

Abstract: An optical lens assembly includes, in order from the object side to the image side: a stop, a first lens element, a second lens element, a third lens element, and an infrared bandpass filter. An entrance pupil diameter of the optical lens assembly is EPD, a half of a maximum field of view of the optical lens assembly is HFOV, and the following condition is satisfied: 0.59<EPD/tan(HFOV)<1.33.

Abstract: An infrared projection lens assembly includes, in order from the image side to the image source side: a stop, a first lens with positive refractive power, a second lens with refractive power, and a third lens with positive refractive power, wherein a radius of curvature of an image-side surface of the first lens is R1, half of a maximum view angle (field of view) of the infrared projection lens assembly is HFOV, a focal length of the infrared projection lens assembly is f, and following condition is satisfied: ?18.2<R1/(sin(HFOV)*f)<?1.53, so as to provide projected light of large angle.

Abstract: An optical lens system includes, in order from the object side to the image side: a first lens with negative refractive power, a stop, a second lens with positive refractive power, and a third lens with positive refractive power, wherein a distance from an object-side surface of the first lens to an image-side surface of the third lens along an optical axis is TD, a distance from the image-side surface of the third lens to an image plane along the optical axis is BFL, half of a maximum view angle (field of view) of the optical lens system is HFOV, an incident pupil aperture of the optical lens system is EPD, and following conditions are satisfied: 1.82<TD/BFL<3.8 and 3.10<sin(HFOV)/EPD<8.12.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. The isolation structure includes a curved bottom surface.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.