Abstract: A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the first-type doped layer and the second-type doped layer.

Abstract: A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.

Abstract: A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer.

Abstract: A light-emitting diode (LED) device includes at least one LED unit. Each LED unit includes at least one LED. Each LED includes an n-side nitride semiconductor layer, a p-side nitride semiconductor layer, and an active layer that is located between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer is includes one or more well layers. At least one of the well layers has a multilayered structure.