Abstract: A method and apparatus for measuring a delay time is provided. First, a plurality of first/second phase signals, a first/second standard signal, and an inverse signal of the second standard signal are generated. The inverse signal of the second standard signal is applied to a second conductive line close to at least an adjacent conductive line. The first/second standard signal is applied to the first/second conductive line to obtain a first/second transmission signal. Then, the first/second transmission signal is sequentially sampled by the first/second phase signals to sequentially obtain a plurality of first/second sampling results. The first/second sampling results are sequentially identified by a first/second identifying level to obtain a first/second identification result. Accordingly, the delay time between the first and the second transmission signal may be obtained by comparing the different the second and the first identification result.

Abstract: A method and apparatus for measuring a delay time is provided. First, a plurality of first/second phase signals, a first/second standard signal, and an inverse signal of the second standard signal are generated. The inverse signal of the second standard signal is applied to a second conductive line close to at least an adjacent conductive line. The first/second standard signal is applied to the first/second conductive line to obtain a first/second transmission signal. Then, the first/second transmission signal is sequentially sampled by the first/second phase signals to sequentially obtain a plurality of first/second sampling results. The first/second sampling results are sequentially identified by a first/second identifying level to obtain a first/second identification result. Accordingly, the delay time between the first and the second transmission signal may be obtained by comparing the different the second and the first identification result.

Abstract: A capacitor structure including a conductive layer and a dielectric layer is provided. The conductive layer includes a first pattern and a second pattern arranged alternatively with respect to each other. In addition, the dielectric layer is disposed between the first spiral pattern and the second spiral pattern. Since in the capacitor structure described in the present invention, the first pattern and the second pattern being used as electrodes are disposed in a spiral shape, the capacitance per unit area of the capacitor structure is increased.

Abstract: A capacitor structure including a conductive layer and a dielectric layer is provided. The conductive layer includes a first pattern and a second pattern arranged alternatively with respect to each other. In addition, the dielectric layer is disposed between the first spiral pattern and the second spiral pattern. Since in the capacitor structure described in the present invention, the first pattern and the second pattern being used as electrodes are disposed in a spiral shape, the capacitance per unit area of the capacitor structure is increased.

Abstract: A selectively updateable mapped data storage system is provided. The data storage system includes an address decoder two improved CAM blocks, and a converter connected between the two improved CAM blocks. This selectively updateable mapped data storage system can be implemented with a smaller layout space on the chip and consumes less electrical power than the prior art. Moreover, this selectively updateable mapped data storage system allows the selective updating procedure to be easily and more efficiently implemented than through software means. The selectively updateable mapped data storage system is therefore more advantageous and cost-effective to use than the prior art.

Abstract: An input/output circuit with wide voltage tolerance is using a feedback circuit for increasing the voltage tolerance. A single gate oxide structure is fabricated instead of a dual gate oxide structure.