Abstract: A method of detecting the presence, absence and/or level of a plurality of analytes-of-interest in a sample, the method comprisES: (a) providing a plurality of objects, each of the plurality of objects having a predetermined, measurable and different imagery characteristic, and further having a predetermined and specific affinity to one analyte of the plurality of analytes-of-interest, each the imagery characteristic corresponding to one the predetermined specific affinity, hence each the imagery characteristic corresponds to one analyte of the plurality of analytes-of interest; (b) providing at least one affinity moiety having a predetermined and specific affinity or predetermined and specific affinities to the plurality of analytes-of-interest, each the affinity moiety having a predetermined, measurable response to light; (c) combining the objects, the at least one affinity moiety and the sample under conditions for affinity binding; and (d) simultaneously determining, for each object of the plurality of ob

Abstract: An inspection system includes a CMOS integrated circuit having integrally formed thereon an at least two dimensional array of photosensors and providing an inspection output representing an object to be inspected. A defect analyzer is operative to receive the inspection output and to provide a defect report.

Abstract: A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semiconductor substrate faces the protective substrate. With the protective substrate providing structural support, the exposed backside surface of the semiconductor substrate is then subjected to grinding and/or chemical etching, followed by optional chemical/mechanical processing, to thin the semiconductor substrate to a range of 10 to 15 microns. A transparent substrate (e.g., glass) is then secured to the backside surface of the semiconductor substrate, thereby sandwiching the semiconductor substrate between the transparent substrate and the protective substrate.

Abstract: A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semiconductor substrate faces the protective substrate. With the protective substrate providing structural support, the exposed backside surface of the semiconductor substrate is then subjected to grinding and/or chemical etching, followed by optional chemical/mechanical processing, to thin the semiconductor substrate to a range of 10 to 15 microns. A transparent substrate (e.g., glass) is then secured to the backside surface of the semiconductor substrate, thereby sandwiching the semiconductor substrate between the transparent substrate and the protective substrate.