Abstract: An array substrate includes: a first substrate (10), including a plurality of sub-pixel regions (101) arranged in an array along a row direction (X) and a column direction (Y); a pixel circuit layer, including a plurality of sub-pixel circuits; a planarization layer (17), provided with a first via hole (170) located in the sub-pixel regions (101), and includes at least one pattern portion (171), the pattern portion (171) includes a plurality of pattern units (171a) arranged in an array along the row direction (X) and the column direction (Y); and a reflective electrode layer, wherein the reflective electrode layer includes a plurality of reflective electrodes (18) that are mutually disconnected, each of the reflective electrodes (18) is located in one of the sub-pixel regions (101) and is electrically connected to the sub-pixel circuit through the first via hole (170).

Abstract: A shift register unit, a driving method, a drive circuit, and a display apparatus are disclosed. The shift register unit includes: a control circuit, which is configured to adjust signals of a first node and a second node according to an input signal end, a first control signal end, a second control signal end and a first reference signal end; a cascade circuit, which is configured to provide, according to the signal of the first node, a signal of a first cascade clock signal end to a cascade output end; and an output circuit, which is configured to provide, according to the signal of the first node, a signal of a control clock signal end to a drive output end, and provide, according to the signal of the second node, a signal of a second reference signal end to the drive output end.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.