Abstract: A semiconductor device and a method of fabricating the same are disclosed. The method includes: providing a substrate; forming a patterned mask layer on the substrate; and forming a drift region in the substrate by performing an ion implantation process using the patterned mask layer as a mask. The patterned mask layer has at least one opening with an overall width increasing in a direction from a source region toward a drain region, thereby a dopant ion concentration in the drift region increasing in the direction from the source region toward the drain region. With the present invention, a semiconductor device having both a relatively low on-resistance and an increased breakdown voltage can be made with a simplified process at reduced cost.

Abstract: A nozzle device applied to a high-pressure cleaning machine is provided, including: a nozzle, including a nozzle casing, where a water outlet channel is provided in the nozzle casing, and a front end of the nozzle casing is provided with at least one liquid discharge port connecting with the water outlet channel; and an exhaust valve, connected to the nozzle casing, and including: a valve seat, provided with a valve cavity; and a valve core, movably arranged in the valve cavity; where the valve seat is provided with an air inlet hole and an air outlet hole, the water outlet channel and a main exhaust passage are arranged in parallel in the nozzle casing, and the valve core is movable relative to the valve cavity to a closed position for blocking the main exhaust passage and an open position for opening the main exhaust passage.

Abstract: A semiconductor device includes: a semiconductor substrate, a gate oxide layer, and a polysilicon field plate. The semiconductor substrate includes a drift region and a well region. An end of the drift region is arranged with a drain region, and an end of the well region is arranged with a source region. The gate oxide layer is arranged on the semiconductor substrate and disposed between the source region and the drain region. The polysilicon field plate is arranged on the gate oxide layer. At least a portion of the polysilicon field plate is projected onto the drift region and includes at least two field-plate regions. While the semiconductor device is operating, in a direction from an end of the drift region near the well region approaching the drain region, an equivalent electrical thickness of an insulating layer between the polysilicon field plate and the drift region gradually increases.

Abstract: A nozzle device applied to a high-pressure cleaning machine is provided, including: a nozzle, including a nozzle casing, where a water outlet channel is provided in the nozzle casing, and a front end of the nozzle casing is provided with at least one liquid discharge port connecting with the water outlet channel; and an exhaust valve, connected to the nozzle casing, and including: a valve seat, provided with a valve cavity; and a valve core, movably arranged in the valve cavity; where the valve seat is provided with an air inlet hole and an air outlet hole, the water outlet channel and a main exhaust passage are arranged in parallel in the nozzle casing, and the valve core is movable relative to the valve cavity to a closed position for blocking the main exhaust passage and an open position for opening the main exhaust passage.