Patents by Inventor Yalcin Ayasli

Patent number: 5796362
Abstract: A post launch identification friend or foe fire control system for a munition has an identification and ranging interrogation unit for mounting on a munition. The interrogation unit transmits an interrogation unit which detects and verifies an incoming identification code from a remote transponder unit in reply to the interrogation code. The range of the remote transponder is determined and a decision signal is provided to the fire control circuit of the munition to enable it to avoid a friendly target; a transponder unit receives the rf carrier signal containing an incoming interrogation code from an interrogation unit on board a munition, validates the incoming interrogation code, and extracts a timing signal from it. An identification code is synchronously generated with the incoming interrogation code using the timing signal. The synchronized identification code is then transmitted back to the interrogation unit on board the munition to confirm the identification of the transponder unit and its range.
Type: Grant
Filed: June 13, 1994
Issued: August 18, 1998
Assignee: Hittite Microwave Corporation
Inventors: Yalcin Ayasli, Peter Katzin
Patent number: 5451915
Abstract: A negative resistance generator includes first and second terminals; first and second inductors connected in series between the terminals; and a semiconductor amplifying device having a first control electrode connected to the first terminal and a first active electrode connected to the second terminal and a second active electrode connected to the junction of the inductors. When employed in an active filter resonator a first variable capacitor is interconnected with the inductors for setting the resonant frequency of the resonator. The resonators may be combined in an active filter with a transmission line where each of the resonators is interconnected to the line by decreasing resistance from the input to the output in order to balance the rf currents to which the resonators are subjected.
Type: Grant
Filed: May 26, 1993
Issued: September 19, 1995
Assignee: Hittite Microwave Corporation
Inventors: Peter J. Katzin, Yalcin Ayasli, Brian E. Bedard
Patent number: 5012123
Abstract: A switching system for controlling rf energy through an rf transmission medium including a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series, and means for providing graduated bias on the control electrodes for establishing an equal control voltage on each device between its control electrode and one of its primary electrodes.
Type: Grant
Filed: March 29, 1989
Issued: April 30, 1991
Assignee: Hittite Microwave, Inc.
Inventors: Yalcin Ayasli, Peter J. Katzin
Patent number: 4992764
Abstract: A power FET includes a substrate of semi-insulating material having a top side and a ground side; an FET fabricated on the ground side of the substrate; and conductor means in the substrate extending from the drain electrode and the gate electrode on the ground side to the top side of the substrate. A ground plane on the ground side of the substrate contacts the source electrode of the FET and is spaced from the gate and drain electrodes to form a dome for minimizing ground inductance and maximizing heat transfer from the FET independent of the thickness of the substrate.
Type: Grant
Filed: February 21, 1989
Issued: February 12, 1991
Assignee: Hittite Microwave Corporation
Inventor: Yalcin Ayasli
Patent number: 4963773
Abstract: A compact low pass/high pass filter phase shifter including a semiconductor switch having a control electrode and first and second load electrodes; a first inductance connected in series with one load electrode and second inductance connected in series with the other load electrode; a third inductance connected in parallel with one load electrode to ground and a fourth inductance connected in parallel with the other load electrode to ground; a capacitance connected in series between the control electrode and ground; and means for applying a control signal to the control electrode for switching the semiconductor switch between a first state in which it operates as a low pass filter and a second state in which it operates as a high pass filter to introduce a phase shift in a propagated signal.
Type: Grant
Filed: July 18, 1988
Issued: October 16, 1990
Assignee: Hittite Microwave Corporation
Inventor: Yalcin Ayasli
Patent number: 4908820
Abstract: A non-reciprocal bidirectional duplexer includes a first transmission medium extending from a first terminal to a third terminal; a second transmission medium extending from the second terminal to the third terminal; and a plurality of non-reciprocal, bidirectional phase shifting elements, coupling the transmission mediums and spaced along them; each of the phase shifting elements includes means for amplifying a signal in a first direction from the first to the second transmission medium and for amplifying a signal in the second direction from the second to the first transmission medium; and means for establishing a phase differential between the signals moving in the first and second directions.
Type: Grant
Filed: March 29, 1989
Issued: March 13, 1990
Assignee: Hittite Microwave Corporation
Inventor: Yalcin Ayasli
Patent number: 4893035
Abstract: A cascaded low pass/high pass filter phase shifter system including: a series of semiconductor switches each having a control electrode and first and second load electrodes; a capacitance connected in series between each control electrode and ground; an inductance connected in series between each second load electrode of one semiconductor switch and the first load electrode of the adjacent semiconductor switch in the series; and means for selectively applying a control signal to each said control electrode for switching the associated semiconductor switch between a first state in which it operates as a low pass filter and a second state in which it operates as a high pass filter to introduce a phase shift in a propagated signal.
Type: Grant
Filed: September 26, 1988
Issued: January 9, 1990
Assignee: Hittite Microwave Corporation
Inventors: Leonard D. Reynolds, Yalcin Ayasli
Patent number: 4801901
Abstract: A non-reciprocal phase shifter including a transmission medium connected between first and second terminals and having a predetermined phase shift which is the same in each direction and an amplifier circuit connected between the first and second terminals for introducing its inherent phase shift in one direction and a phase shift in excess of its inherent phase shift in the other direction for establishing a non-reciprocal phase shift; and a circulator made from such a phase shifter.
Type: Grant
Filed: March 13, 1987
Issued: January 31, 1989
Assignee: Hittite Microwave Corporation
Inventor: Yalcin Ayasli
Patent number: 4772858
Abstract: A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and an output terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between a second input terminal and said output terminal. Separate bias circuits are provided to the input electrodes of the first and second channels. Bias signals fed to the bias circuits and coupled to the input electrodes place the FETS in an "on" state to provide gain to r.f. input signals fed thereto, or in a "pinch-off" state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 2.times.1 switch or a two way active r.f. combiner which provides gain to a signal is provided.
Type: Grant
Filed: November 4, 1987
Issued: September 20, 1988
Assignee: Raytheon Company
Inventors: Toshikazu Tsukii, Yalcin Ayasli
Patent number: 4760350
Abstract: An internally matched power amplifier including an input terminal for receiving an input signal and an output terminal; a plurality of semiconductor devices connected with the load electrodes in series; transmission means for coupling the load electrodes of neighboring devices in the series and establishing an internal impedance match; the last device in the series having its other electrode connected to the output terminal; the first device in the series having its control electrode connected to the input terminal and its other load electrode connected to a common conductor and having a predetermined d.c. bias level and a predetermined signal voltage level between its control and its other electrode; first means for setting the control means of each device but the first in the series to the predetermined signal voltage level and second means for biasing the control electrode of each device but the first in the series to the predetermined d.c. bias level.
Type: Grant
Filed: June 8, 1987
Issued: July 26, 1988
Assignee: Hittite Microwave Corporation
Inventor: Yalcin Ayasli
Patent number: 4733203
Abstract: A network is provided which is selectively configurable as a high pass and low pass filter. A pair of sets of field effect transistors FETS is provided, each set comprising three FETS connected in a T-configuration. A pair of the FETS in each set have a drain electrode of one FET coupled to the source electrode of the other FET to provide a series element of the T-configured set. The third FET has drain and source electrodes coupled between the common connection of the pair of FETS and ground to form a shunt element of the T-configured set. The gate electrodes of the series elements of a first one of the sets of FETS and the shunt element of the other set of the FETS are each fed a common control voltage signal. A first one of the sets of FETS is capacitively coupled between the input and output terminals of the network, and the second one of the set of FETS is inductively coupled between the input and output terminals of the network.
Type: Grant
Filed: March 12, 1984
Issued: March 22, 1988
Assignee: Raytheon Company
Inventor: Yalcin Ayasli
Patent number: 4543535
Abstract: A distributed power amplifier includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, such FETS having cascaded gate electrodes and cascaded drain electrodes successively coupled between an input terminal and an output terminal. The gate electrode of each one of the successively coupled FETS is coupled to the input terminal through a corresponding one of a plurality of capacitors, and a common bias source through one of a corresponding plurality of high impedance bias paths. Since the gate electrodes of each FET are coupled to the input terminal through a capacitor, the coupling capacitor in combination with the inherent capacitance of each FET provides a potential divider into each gate electrode. Therefore, the power fed to each gate electrode is selected by selecting the value of capacitance for the coupling capacitors.
Type: Grant
Filed: April 16, 1984
Issued: September 24, 1985
Assignee: Raytheon Company
Inventor: Yalcin Ayasli
Patent number: 4502027
Abstract: A bidirectional switch for selectively switching a microwave frequency signal between one of two signal paths. The switch includes a pair of field effect transistors, and a pair of transmission lines coupled together at one end thereof to provide a common port. Each second end of each microwave transmission line is coupled to a drain electrode of one of such field effect transistors to provide a branch port at each second end of each microwave transmission line. The electrical lengths of each transmission line are selected in accordance with the operating wavelength of the circuit to provide an impedance corresponding to an open circuit at one end, when a short circuit is provided at the opposite end. A signal is coupled between the common port and a selected one of the branch ports, in response to a pair of complementary binary control signals fed to the gate electrodes of the FETs.
Type: Grant
Filed: October 24, 1983
Issued: February 26, 1985
Assignee: Raytheon Company
Inventor: Yalcin Ayasli
Patent number: 4486719
Abstract: A distributed amplifier having a plurality of successively coupled field effect transistors with cascaded gate electrodes and cascaded drain electrodes. A first one of such transistors has the gate electrode thereof coupled to an input terminal adapted to receive an input radio frequency signal and the drain electrode thereof coupled to a dc drain electrode bias circuit. The last one of the successively coupled field effect transistors has the gate electrode thereof coupled to a dc gate electrode bias circuit and a drain electrode coupled to a radio frequency output terminal which produces an amplified radio frequency signal. The source electrodes of the plurality of transistors are coupled to ground. A drain bias voltage source is coupled between ground and the drain electrode bias circuit, such bias circuit providing a direct current path between such drain bias voltage source and the drain electrodes of the transistors.
Type: Grant
Filed: July 1, 1982
Issued: December 4, 1984
Assignee: Raytheon Company
Inventor: Yalcin Ayasli
Patent number: 4456888
Abstract: A radio frequency network is provided having a plurality of field effect transistor cells, each one of such cells having a reactive element, and coupling means for electrically interconnecting the plurality of field effect transistor cells, such coupling means having an impedance in accordance with the reactance of the reactive elements of the cells to provide such radio frequency network with a predetermined characteristic impedance related to the impedance of an input circuit which feeds radio frequency energy to an input one of the plurality of cells. With such arrangement the coupling means and the plurality of field effect transistor cells provide the radio frequency network with a predetermined characteristic impedance which is related to the impedance of the input circuit.
Type: Grant
Filed: August 18, 1983
Issued: June 26, 1984
Assignee: Raytheon Company
Inventor: Yalcin Ayasli