Abstract: An RF multiplexing switching circuit for an RF front end (e.g., for a mobile communications device transmitting/receiving in the RF region) includes a set of RF inputs and a set of RF outputs outputting to RF filters, the RF inputs and outputs connected by signal paths. The switching circuit includes series switches for creating conducting signal paths for transmitting/receiving RF signals between the RF inputs and outputs, and a set of common shared shunt switches (e.g., for M RF inputs and N RF outputs, M+X shunt switches, where X<N) collectively capable (e.g., in conjunction with the series switches) of pulling to ground potential any RF input and output not on the conducting signal path. The RF switching circuit may be implemented as a band select switch (e.g., where the inputs connect to power amplifiers) or an antenna switch (e.g., where the inputs connect to device antennas).

Abstract: Circuitry, modules, devices, and methods for integrating front-end carrier aggregation architecture are disclosed. In some embodiments, a method can include providing a packaging substrate configured to receive a plurality of components. The method can also include providing a front-end architecture implemented on the packaging substrate, the front-end architecture including a switching assembly configured to provide switching for two or more frequency bands, the switching assembly including at least one coupler configured to couple a signal associated with the switching assembly, and a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Abstract: Circuitry, modules and devices for integrating front-end carrier aggregation architecture, are disclosed. In some embodiments, a front-end architecture includes a switching assembly configured to provide switching for two or more frequency bands. In some embodiments, the switching assembly includes at least one coupler configured to couple a signal associated with the switching assembly. The front-end architecture can also include a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Abstract: Circuitry, modules and devices for integrating front-end carrier aggregation architecture, are disclosed. In some embodiments, a front-end architecture includes a switching assembly configured to provide switching for two or more frequency bands. In some embodiments, the switching assembly includes at least one coupler configured to couple a signal associated with the switching assembly. The front-end architecture can also include a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures. A compensation circuit can act to protect the receive path during an RF transmit mode.

Abstract: Embodiments of radio frequency (RF) systems include a power amplifier having a primary winding and a secondary winding. The primary winding can be biased in different states in transmit and receive modes such that a difference between center frequencies of the primary winding and the secondary winding are significantly different in the different modes.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures. A compensation circuit can act to protect the receive path during an RF transmit mode.

Abstract: Radio-frequency switch with switchable capacitor. In some embodiments, a RF switch includes a first field-effect transistor (FET) disposed between an input node and an output node. The RF switch also includes a switchable capacitor disposed between the input node and the output node, the switchable capacitor coupled in parallel with the first FET.

Abstract: Radio-frequency (RF) switch without negative voltages. In some embodiments, a RF switch includes an input node configured to receive an RF signal. The RF switch also includes an output node configured to output the RF signal. The RF switch further includes a first field-effect transistor (FET) disposed between the input node and the output node, the first FET configured to operate without a negative voltage.

Abstract: Circuitry, modules and devices for integrating front-end carrier aggregation architecture, are disclosed. In some embodiments, a front-end architecture includes a switching assembly configured to provide switching for two or more frequency bands. In some embodiments, the switching assembly includes at least one coupler configured to couple a signal associated with the switching assembly. The front-end architecture can also include a diplexer circuit including a first filter configured to pass a first frequency band, a second filter configured to pass a second frequency band, and a first electrostatic discharge network configured to dissipate electrostatic energy associated with the first and second frequency bands from the front-end architecture.

Abstract: Embodiments of radio frequency (RF) systems include a power amplifier having a primary winding and a secondary winding. The primary winding can be biased in different states in transmit and receive modes such that a difference between center frequencies of the primary winding and the secondary winding are significantly different in the different modes.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures. A compensation circuit can act to protect the receive path during an RF transmit mode.

Abstract: A handheld communication device having an RF front end module has a switchable balun comprising a primary winding having a first two port winding and a second two port winding where a low noise amplifier is operatively coupled to the first and second two port windings and a power amplifier is operatively coupled to the first and second two port windings. A secondary winding is operatively coupled to an antenna, and a transceiver is operatively coupled to the low noise amplifier and the power amplifier. When the switchable balun is in a receive state, the antenna is operatively coupled to the transceiver through the low noise amplifier, and when the switchable balun is in a transmit state, the antenna is operatively coupled to the transceiver through the power amplifier. The ratio of the primary winding to the secondary winding is greater than a one-to-one ratio.

Abstract: A handheld communication device having an RF front end module has a switchable balun comprising a primary winding having a first two port winding and a second two port winding where a low noise amplifier is operatively coupled to the first and second two port windings and a power amplifier is operatively coupled to the first and second two port windings. A secondary winding is operatively coupled to an antenna, and a transceiver is operatively coupled to the low noise amplifier and the power amplifier. When the switchable balun is in a receive state, the antenna is operatively coupled to the transceiver through the low noise amplifier, and when the switchable balun is in a transmit state, the antenna is operatively coupled to the transceiver through the power amplifier.