Abstract: A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.

Abstract: A product workpiece can be processed to form product dice. A test mask can allow intentional changes to be made to a feature on the product workpiece to examine how the altered feature performs. Use of the test mask may be used or not used based on the needs or desires of skilled artisans. By using the test mask, a separate dedicated test structure is not required to be formed in a scribe lane or within an area that could otherwise be used for a product die. Thus, the sampling level by using the test mask can be varied. Also, separate test workpieces, which may not be processed using a significantly different process flow or at significantly different times as compared to product workpieces, are not required. The product workpiece with the altered feature can be electrically tested without the need to form test or bond pads.