Abstract: The disclosure describes multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.

Abstract: The disclosure describes hard magnetic materials including ??-Fe16N2 and techniques for forming hard magnetic materials including ??-Fe16N2 using chemical vapor deposition or liquid phase epitaxy.

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

Abstract: Dihydrogen metaphosphate can be synthesized via protonation, and can react with a dehydrating agent to afford tetrametaphosphate anhydride. A monohydrogen tetra-metaphosphate organic ester can be derived from the anhydride. A metal tetrametaphosphate complex can be prepared using a metal salt and a dihydrogen tetrametaphosphate.

Abstract: The disclosure describes techniques for forming nanoparticles including Fe16N2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nano particle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe16N2, Fe16(NB)2, Fe16(NC)2, or Fe16(NCB)2.

Abstract: A method for synthesizing nano-lithium iron phosphate without water of crystallization in aqueous phase at normal pressure, which is part of a preparation method for a lithium ion positive electrode material. The preparation process comprises the following steps: preparing lithium phosphate, preparing an aqueous phase suspension of lithium phosphate, preparing a ferrous salt solution, preparing nano-lithium iron phosphate without water of crystallization, and recovering and recycling lithium in a mother solution of lithium iron phosphate. The present invention has the beneficial effects of mild reaction conditions, a short time, low energy consumption, reduced costs due to the recovery and recycling of lithium in the mother solution, stable batches, uniform and controllable strength, and being conducive to industrial production.

Abstract: The disclosure describes magnetic materials including iron nitride, bulk permanent magnets including iron nitride, techniques for forming magnetic materials including iron nitride, and techniques for forming bulk permanent magnets including iron nitride.

Abstract: An inductor may include a magnetic material that may include ??-Fe16(NxZ1-x)2 or ??-Fe8(NxZ1-x), or a mixture of at least one of ??-Fe16N2 or ??-Fe8N and at least one of ??-Fe16Z2 or ??-Fe8Z, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material may include a relatively high magnetic saturation, such as greater than about 200 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material may include a relatively low coercivity or magnetocrystalline anisotropy. Techniques for forming the inductor including the magnetic material are also described.

Abstract: A magnetic material may include ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 may include a relatively high magnetic saturation, such as greater than about 219 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 may include a relatively low coercivity. Techniques for forming the magnetic material are also described.

Abstract: A device including a conductive layer configured to output a spin-current based on an analog input value, a plurality of magnetoresistive devices, and an encoder configured to output a digital value. Each of the magnetoresistive devices may be configured to receive a different reference voltage on a first side and the spin-current on a second side. The magnetization state of each of the magnetoresistive devices is set by respective reference voltages and the spin-current. The encoder may include a plurality of digital bits that is a digital representation of the analog input value based on the magnetization states of the magnetoresistive devices.

Abstract: A method may include annealing a material including iron and nitrogen in the presence of an applied magnetic field to form at least one Fe16N2 phase domain. The applied magnetic field may have a strength of at least about 0.2 Tesla (T).

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

Abstract: A permanent magnet may include a Fe16N2 phase constitution.

Abstract: A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip.

Abstract: A type of high voltage isolation trench, its fabrication method and an MOS device are disclosed. The isolation trench includes a trench extending to a buried oxide layer of a wafer, with high concentration N+ injected to a side wall of the trench, polysilicon being filled in the trench and oxides are being filled between the side wall of the trench and the polysilicon. Multiple composite structures are used to fill the vacant trench to reduce stress brought by trenching so as to improve performance of the device on one hand and to achieve the purpose of increasing breakdown voltage and improving superficial flatness on the other hand.

Abstract: A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection.

Abstract: A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted. of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other-end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip.