Abstract: A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.

Abstract: A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.

Abstract: A solid state storage device includes a main memory cell array and a sub-memory area. The main memory cell array stores data in a flash memory, whereas the sub-memory includes a non-volatile random access memory for storing data. The data storage speed of the non-volatile random access memory of the sub-memory area is faster than the data storage speed of the flash memory of the main memory cell area. The sub-memory area of the solid state storage device also stores address mapping information therein, so that the address mapping information does not have to be transferred to the main memory cell area and a portion of the main memory cell area does not have to be designated for a non-volatile memory for storing the address mapping information.

Abstract: A solid state storage system is disclosed capable of performing wear leveling utilizing attributes of different types of data. The solid state storage system performs a control operation such that logical addresses are configured to be mapped to physical addresses of pages in multiple planes of a memory area. In addition, the continuous logical addresses are mapped to the physical addresses of the pages of the different planes. The logical addresses are subsequently grouped so as to define multiple data areas for programming data having different attributes. Accordingly, the data is allocated so as to reduce a life time deviation between planes.

Abstract: A solid state storage system includes a controller configured to divide memory blocks of a flash memory area into first blocks and second blocks corresponding to the first blocks, newly allocates pages of the second blocks when an external write command is requested. The controller is also configured to allocate selected sectors in the allocated pages according to sector addresses and execute a write command.

Abstract: A solid state storage system having a hierarchy of different control units that systematically process data in a corresponding memory area is disclosed. The solid state storage system includes a first control unit and at least one second control unit. The first control unit distributes and transmits external command signals that are provided from a host interface. The second control unit is controlled by the first control unit and performs an address mapping operation, an error checking/correcting operation, an ad defective block managing operation on a corresponding plurality of memory chips in the memory area.