Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

Abstract: The technology described herein is directed to agonists of, e.g. Esr2, Dlx5, and/or Egr3, for the inhibition of cancer cells (e.g. squamous carcinoma cancer cells) and the treatment of cancer.

Abstract: Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device may include a first layer having a first conductivity type; a second layer disposed atop the first layer, the second layer having the first conductivity type; a termination region formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.

Abstract: The technology described herein is directed to agonists of e.g. Esr2, Dlx5, and/or Egr3, for the inhibition of cancer cells (e.g. squamous carcinoma cancer cells) and the treatment of cancer.

Abstract: Method and system for scheduling professional service procedures using artificial intelligence, specifically, using evolutionary search. Procedures can be scheduled optimally to achieve user defined goals and objectives. The method and system also optimizes future planning of professional service procedures and makes recommendations to the user on how to optimally deploy resources and professionals.

Abstract: It has been discovered that amplifications in the gene coactivator activator (CoAA) blocks stem cell differentiation and induces cancer stem cells. One embodiment provides compositions and methods for treating or alleviating one or more symptoms associated with cancer due to gene amplifications in CoAA. Another embodiment provides methods and compositions for detecting cancer due to gene amplifications in CoAA. Still another embodiment provides methods for identifying compounds, antibodies and nucleic acid molecules that are useful for treating cancer due to gene amplifications in CoAA. Preferably the disclosed compositions antagonize or interfere with the CoAA amplicons and the biological activity of CoAA and or splice variants thereof.