Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.

Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided. A transition metal-supporting intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3 . . . (1) wherein A represents a rare earth element, and X represents Si or Ge.

Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.

Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided. A transition metal-supported intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3??(1) wherein A represents a rare earth element, and X represents Si or Ge.

Abstract: The embodiments disclosed a method for preparing a p-type ZnO-based material, the method conducted in a metal organic chemical vapor deposition (MOCVD) system, including cleaning a surface of a substrate and placing the substrate in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3-10?4 Pa, heating the substrate to 200-700° C., introducing an organic Zn source, an organic Na source and oxygen, and depositing the p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with MOCVD equipment provides a p-type ZnO-based material having excellent crystal quality and electrical and optical qualities.

Abstract: The present invention provides a method for preparing a p-type ZnO-based material, which method is conducted in a metal organic chemical vapor deposition system, including: cleaning the surface of a substrate and placing it in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3˜10?4 Pa, heating the substrate to 200˜700, introducing an organic Zn source, an organic Na source and oxygen, and depositing a p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with an MOCVD equipment can prepare a p-type ZnO-based material having excellent crystal quality and electrical and optical performances. Adopting an organic substance such as cyclopentadienyl sodium as a metal organic source for Na-doping can realize industrial production of the Na-doped p-type ZnO-based material.