Abstract: A semiconductor power device formed in a semiconductor substrate that includes a plurality of trenches formed at a top portion of the semiconductor substrate. The trenches extend laterally across the semiconductor substrate along a longitudinal direction and each trench has a nonlinear portion thus the nonlinear portion has a trench sidewall perpendicular to the longitudinal direction of the trench. A plurality of trench bottom dopant regions are formed below the trench bottom surface. A sidewall dopant region is formed along the perpendicular sidewall wherein the sidewall dopant region extends vertically downward along the perpendicular sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the perpendicular sidewall wherein the sidewall dopant region extends vertically downward along the perpendicular sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.