Abstract: An exposure apparatus is provided for performing an unidirectional scan-exposure. The exposure apparatus includes a base and a wafer stage group having a plurality of wafer stages on the base for holding wafers and successively moving from a first position to a second position of the base cyclically. The exposure apparatus also includes an alignment detection unit above the first position for detecting wafer stage fiducials at the first position and alignment marks on a wafer on the wafer stage to align the wafer. Further, the exposure apparatus includes a reticle stage on the second position for loading a cylindrical reticle and causing the cylindrical reticle to rotate around the center axis of the reticle stage and an optical projection unit between the reticle stage and the base for projecting light passing through the cylindrical reticle onto exposure regions on a wafer on the wafer stage.

Abstract: A standard wafer is provided including a substrate; a first layer of semiconductor material formed on the substrate; a bar formed over the first layer of semiconductor material with an interlayer interposed therebetween; and a first sidewall spacer and a second sidewall spacer formed on the opposite sides of the bar respectively, in which the bar and the first layer of semiconductor material are formed of a same semiconductor material, and the interlayer interposed between the first layer of semiconductor material and the bar is formed of a first oxide, and the first sidewall spacer and the second sidewall spacer are formed of a second oxide. A corresponding fabrication method of the standard wafer is also provided.

Abstract: An exposure apparatus is provided for performing an unidirectional scan-exposure. The exposure apparatus includes a base and a wafer stage group having a plurality of wafer stages on the base for holding wafers and successively moving from a first position to a second position of the base cyclically. The exposure apparatus also includes an alignment detection unit above the first position for detecting wafer stage fiducials at the first position and alignment marks on a wafer on the wafer stage to align the wafer. Further, the exposure apparatus includes a reticle stage on the second position for loading a cylindrical reticle and causing the cylindrical reticle to rotate around the center axis of the reticle stage and an optical projection unit between the reticle stage and the base for projecting light passing through the cylindrical reticle onto exposure regions on a wafer on the wafer stage.

Abstract: A standard wafer is provided including a substrate; a first layer of semiconductor material formed on the substrate; a bar formed over the first layer of semiconductor material with an interlayer interposed therebetween; and a first sidewall spacer and a second sidewall spacer formed on the opposite sides of the bar respectively, in which the bar and the first layer of semiconductor material are formed of a same semiconductor material, and the interlayer interposed between the first layer of semiconductor material and the bar is formed of a first oxide, and the first sidewall spacer and the second sidewall spacer are formed of a second oxide. A corresponding fabrication method of the standard wafer is also provided.