Patents by Inventor Yann Cargouet

Yann Cargouet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240106403
    Abstract: A programmable gain amplifier that comprises: a transconductance amplifier, a switch leakage compensation circuit and a transimpedance amplifier. The transconductance amplifier provides a transconductance amplifier current signal and includes a switchable resistance network. The switch leakage compensation circuit provides a compensation current signal and comprises a switchable compensation resistance network. The transimpedance amplifier provides the output voltage signal based on the difference between the transconductance amplifier current signal and the compensation current signal. The switchable compensation resistance network comprises a plurality of branches in parallel with each other, wherein each branch includes: a gain-mimicking switch that has a corresponding gain-setting switch in the switchable resistance network; and a leakage-current-conducting switch in series with the gain-mimicking switch.
    Type: Application
    Filed: September 11, 2023
    Publication date: March 28, 2024
    Inventors: Yann Cargouet, Guillaume Mouret
  • Publication number: 20240063925
    Abstract: A calibration apparatus for a communication system. The calibration apparatus is configured to: a) set a variable termination-resistance at a receiver to a predetermined value; b) cause a transmitter to send a calibration pattern to the receiver by: setting the differential voltage on the line to a non-zero value during a non-zero-phase; and setting the differential voltage on the line to zero during a subsequent zero-phase; c) compare the differential voltage on the line during the zero-phase with a reduced-bit-value-threshold, wherein the reduced-bit-value-threshold is less than a bit-value-threshold that is used during active communication. If the differential voltage on the line during the zero-phase exceeds the reduced-bit-value-threshold, then the calibration apparatus adjusts the value of the variable termination-resistance and returns to step b).
    Type: Application
    Filed: August 8, 2023
    Publication date: February 22, 2024
    Inventors: Guillaume Mouret, Yann Cargouet, Tristan Bosvieux
  • Publication number: 20230266786
    Abstract: A bandgap reference circuit includes a first current generator having first and second bipolar transistors for generating a first current that varies proportionally as a function of temperature. A second current generator includes a field effect transistor for generating a second current that varies inversely as a function of temperature. A trimming circuit includes a third bipolar transistor sized to match the first bipolar transistor, a third current generator having a second field effect transistor coupled to a collector and base of the third bipolar transistor to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current by adding the third current to or subtracting the third current from the second current based on a trim control signal. A bandgap reference current is generated by summing the first current and the modified second current.
    Type: Application
    Filed: February 14, 2023
    Publication date: August 24, 2023
    Inventors: Guillaume Mouret, Yann Cargouet, Thierry Michel Alain Sicard
  • Patent number: 10890935
    Abstract: A low voltage bandgap reference circuit (200) is provided which includes a first current generator (202) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator (204, 205) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit (206) connected to generate a bandgap reference current in response to the first current and the second current.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: January 12, 2021
    Assignee: NXP USA, Inc.
    Inventors: Guillaume Mouret, Yann Cargouet, Thierry Sicard
  • Publication number: 20200233445
    Abstract: A low voltage bandgap reference circuit (200) is provided which includes a first current generator (202) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator (204, 205) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit (206) connected to generate a bandgap reference current in response to the first current and the second current.
    Type: Application
    Filed: February 22, 2019
    Publication date: July 23, 2020
    Applicant: NXP USA, Inc.
    Inventors: Guillaume Mouret, Yann Cargouet, Thierry Sicard