Abstract: A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.

Abstract: A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.

Abstract: A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.

Abstract: A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.