Patents by Inventor Yannick Hague
Yannick Hague has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240022242Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.Type: ApplicationFiled: September 26, 2023Publication date: January 18, 2024Applicant: STMicroelectronics (Tours) SASInventors: Romain PICHON, Yannick HAGUE
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Patent number: 11811395Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.Type: GrantFiled: September 3, 2021Date of Patent: November 7, 2023Assignee: STMicroelectronics (Tours) SASInventors: Romain Pichon, Yannick Hague
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Patent number: 11705827Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.Type: GrantFiled: August 16, 2022Date of Patent: July 18, 2023Assignee: STMicroelectronics (Tours) SASInventors: Yannick Hague, Romain Launois
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Publication number: 20230074505Abstract: A converter includes first and second transistors coupled between first and second nodes, and first and second thyristors coupled between the first and second nodes. The converter is controlled for operation to: in first periods, turn the first transistor and second thyristor on and turn the second transistor and the first thyristor off, and in second periods, turn the first transistor and the second thyristor off and turn the second transistor and the first thyristor on. Further control of converter operation includes, for a third period following each first period, turning the first and second transistors off, turning the second thyristor off, and injecting a current into the gate of the first thyristor. Additional control of converter operation includes, for a fourth period following each second period, turning the first and second transistors off, turning the first thyristor off, and injecting a current into the gate of the second thyristor.Type: ApplicationFiled: September 6, 2022Publication date: March 9, 2023Applicant: STMicroelectronics (Tours) SASInventors: Yannick HAGUE, Romain LAUNOIS
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Publication number: 20220393608Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Applicant: STMicroelectronics (Tours) SASInventors: Yannick HAGUE, Romain LAUNOIS
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Patent number: 11451157Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.Type: GrantFiled: October 15, 2020Date of Patent: September 20, 2022Assignee: STMicroelectronics (Tours) SASInventors: Yannick Hague, Romain Launois
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Publication number: 20220200472Abstract: A voltage converter includes a circuit formed by a parallel association, connected between first and second nodes, of a first branch and a second branch. The first branch includes a first controlled rectifying element having a first impedance. The second branch includes a resistor associated in series with a second rectifying element having a second impedance substantially equal to the first impedance. The second rectifying element may, for example, be a triac having its gate coupled to receive a signal from an intermediate node in the series association of the second branch. Alternatively, the second rectifying element may be a thyristor having its gate coupled to receive a signal at the anode of the thyristor.Type: ApplicationFiled: December 14, 2021Publication date: June 23, 2022Applicant: STMicroelectronics (Tours) SASInventors: Yannick HAGUE, Benoit RENARD, Romain LAUNOIS
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Publication number: 20220166340Abstract: A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: STMicroelectronics (Tours) SASInventors: Yannick HAGUE, Romain LAUNOIS
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Publication number: 20220077850Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.Type: ApplicationFiled: September 3, 2021Publication date: March 10, 2022Applicant: STMicroelectronics (Tours) SASInventors: Romain PICHON, Yannick HAGUE
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Publication number: 20210135590Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.Type: ApplicationFiled: October 15, 2020Publication date: May 6, 2021Applicant: STMicroelectronics (Tours) SASInventors: Yannick HAGUE, Romain LAUNOIS
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Patent number: 10916939Abstract: Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil™ avalanche diode.Type: GrantFiled: October 2, 2018Date of Patent: February 9, 2021Assignees: STMicroelectronics (Tours) SAS, STMicroelectronics Asia Pacific Pte LtdInventors: Romain Pichon, Yannick Hague, Sean Choi
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Publication number: 20200106267Abstract: Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil™ avalanche diode.Type: ApplicationFiled: October 2, 2018Publication date: April 2, 2020Applicants: STMicroelectronics (Tours) SAS, STMicroelectronics Asia Pacific Pte LtdInventors: Romain PICHON, Yannick HAGUE, Sean CHOI
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Patent number: 9997623Abstract: A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.Type: GrantFiled: December 3, 2015Date of Patent: June 12, 2018Assignee: STMicroelectronics (Tours) SASInventor: Yannick Hague
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Patent number: 9680468Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.Type: GrantFiled: December 3, 2015Date of Patent: June 13, 2017Assignee: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard
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Publication number: 20160344384Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.Type: ApplicationFiled: December 3, 2015Publication date: November 24, 2016Applicant: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard
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Publication number: 20160329417Abstract: A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.Type: ApplicationFiled: December 3, 2015Publication date: November 10, 2016Applicant: STMicroelectronics (Tours) SASInventor: Yannick Hague
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Patent number: 8912566Abstract: A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its base connected to a control terminal, and its collector connected to a terminal intended to be connected to a first reference voltage, the main terminal of the triac on the side of the transistor being intended to be connected to a second reference voltage, the transistor being formed in a first well of the second conductivity type and the triac comprising on the transistor side a second well of the second conductivity type, the first and second wells being formed so that the substrate-well breakdown voltage of the transistor is greater than the substrate-well breakdown voltage of the triac by at least the difference between the first and second reference voltages.Type: GrantFiled: October 23, 2012Date of Patent: December 16, 2014Assignee: STMicroelectronics (Tours) SASInventor: Yannick Hague
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Patent number: 8901601Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.Type: GrantFiled: February 22, 2013Date of Patent: December 2, 2014Assignees: STMicroelectronics (Tours) SAS, Universite Francois Rabelais UFR Sciences et TechniquesInventors: Samuel Menard, Yannick Hague, Gaël Gautier
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Patent number: 8704270Abstract: A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.Type: GrantFiled: August 16, 2011Date of Patent: April 22, 2014Assignee: STMicroelectronics (Tours) SASInventors: Samuel Menard, Yannick Hague
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Patent number: 8698227Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.Type: GrantFiled: December 21, 2011Date of Patent: April 15, 2014Assignee: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard