Abstract: The invention relates to a method, a device and a system for monitoring the IGBT junction temperature, wherein the linear relationship between each turn-off DC bus ringing peak voltage and the corresponding turn-off IGBT junction temperature, the phase current directions, and the initial and secondary states of the half-bridge arms are used to accurately determine the monitoring time of the turn-off DC bus ringing peak voltage, thereby obtaining the IGBT junction temperature at a converter level with higher sensitivity. The IGBT junction temperature obtained using the junction temperature monitoring method provided by the invention is an appropriate converter-level parameter, which has a good application prospect in multi-IGBT junction temperature estimation.

Abstract: Disclosed are an IGBT-module condition monitoring equipment and method. The IGBT-module condition monitoring equipment includes an IGBT module, a gate turning-on voltage overshoot monitoring module, a driving circuit, a bond wire state judging module, and a signal acquisition module. The breakage condition of bond wires is obtained by comparing a monitored actual gate turning-on voltage overshoot with a preset reference gate turning-on voltage overshoot threshold. The present invention solves the problem encountered in monitoring the aging of IGBT bond wires in power electronic converters.

Abstract: Disclosed are an IGBT-module condition monitoring equipment and method. The IGBT-module condition monitoring equipment includes an IGBT module, a gate turning-on voltage overshoot monitoring module, a driving circuit, a bond wire state judging module, and a signal acquisition module. The breakage condition of bond wires is obtained by comparing a monitored actual gate turning-on voltage overshoot with a preset reference gate turning-on voltage overshoot threshold. The present invention solves the problem encountered in monitoring the aging of IGBT bond wires in power electronic converters.