Abstract: A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric layers alternately and horizontally disposed on the substrate; forming a channel column structure on the substrate and in the plurality of conductive layers and the plurality of dielectric layers, where a side wall of the channel column structure is in contact with the plurality of conductive layers; forming a second dielectric layer covering the first dielectric layer; and forming, in the first and second dielectric layers, a conductive column structure adjacent to the channel column structure and in contact with one of the plurality of conductive layers, where the conductive column structure includes a liner insulating layer as a shell layer.

Abstract: A film containing alginate membrane and a manufacturing method of the same are revealed. A film carrier is used to absorb liquid and is treated by two separate and continuous coating processes. At least one surface of the film carrier is coated with a layer of alginate solution containing a certain percent of sodium alginate or potassium alginate by weight and then is coated with a layer of salt water solution containing a certain percent of divalent metal ions. Then crosslinking occurs between the alginate in the alginate solution and the divalent metal ions in the salt solution on the surface of the film carrier or infiltrating into the film carrier so as to form a hydrogel complex membrane having a network structure. Thus the continuous and fast mass-production of the film is achieved.