Abstract: A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric layers alternately and horizontally disposed on the substrate; forming a channel column structure on the substrate and in the plurality of conductive layers and the plurality of dielectric layers, where a side wall of the channel column structure is in contact with the plurality of conductive layers; forming a second dielectric layer covering the first dielectric layer; and forming, in the first and second dielectric layers, a conductive column structure adjacent to the channel column structure and in contact with one of the plurality of conductive layers, where the conductive column structure includes a liner insulating layer as a shell layer.

Abstract: Disclosed is wristband and wrist wearable device, including: a wristband body portion, one end is connected to one end of a device body of a wrist wearable device, and the other end is a free end; and a memory metal portion, which is arranged on the wristband body portion and has an arc-shaped memory state in a natural state, so that the wristband body portion is naturally maintained in an arc shape. The memory metal portion comprises a strip-shaped memory metal piece including a first metal segment, a second metal segment, and a third metal segment that are sequentially connected, the first metal segment and the third metal segment extend along a length direction of the wristband body portion in parallel, the second metal segment is arranged at the free end of the wristband body portion and is provided with at least one bent portion.

Abstract: A circuit includes a control circuit having a first control circuit input, a second control circuit input, a first control circuit output, and a second control circuit output, and a first transistor having a first current terminal, a second current terminal, and a control terminal, the control terminal coupled to the first control circuit output, the first current terminal coupled to the first control circuit input and to a second transistor, and the second current terminal adapted to be coupled to the second transistor, a logic circuit having a first logic input, a second logic input, and a logic output, the first logic input coupled to the second control circuit output and a switch having a first switch terminal, a second switch terminal, and a switch control terminal, the switch control terminal coupled to the logic output and the first switch terminal coupled to the second current terminal.

Abstract: One-time programmable (OTP) bit-cell for an integrated circuit (IC) that includes an OTP element, such as a fuse or antifuse, coupled in electrical series with a selector that comprises a Schottky junction. The selector may comprise a metal-semiconductor-metal (MSM) material stack operable as transient voltage suppression (TVS) device that experiences electrical breakdown at a voltage below a programming voltage of the OTP element. In response to a programming voltage, the MSM stack may breakdown and pass a transient current sufficient for programming the OTP element. In response to a lower (e.g., read) voltage, the MSM stack may breakdown and pass a transient current insufficient for programming, but sufficient to sense a state of the OTP element. In response to an even lower (e.g., half-read) voltage, the MSM stack may present a very high OTP bit-cell input impedance, reducing leakage and/or sneak path currents within an array of such bit-cells.

Abstract: A chip includes a power pin, a ground pin, a plurality of input/output (I/O) pins, a readable/writable memory, a switching circuit, and a control circuit. The I/O pins include a plurality of mapping pins and a control pin. The readable/writable memory includes a clock port, a plurality of I/O ports, and an enable port. The control circuit selectively activates or does not activate the switching circuit according to the control pin. When the switching circuit is activated, the switching circuit electrically couples the clock port, the I/O ports, and the enable port to the mapping pins respectively.

Abstract: A control method of a carbonated water machine and a carbonated water machine are provided. The carbonated water machine includes a mixer, a liquid supply assembly, and a gas supply assembly. A mixing cavity is formed in the mixer, and the mixer is provided with a gas-liquid inlet and an outlet connected to the mixing cavity, a liquid outlet of the liquid supply assembly and a gas outlet of the gas supply assembly are both connected to the gas-liquid inlet, the control method includes: receiving a carbonated water production instruction; and turning on the liquid supply assembly to inject liquid into the mixing cavity, and turning on the gas supply assembly to inject carbon dioxide into the mixing cavity, so that the liquid and the carbon dioxide are mixed in the mixing cavity to form carbonated water. The present application can improve a convenience of carbonated water production.

Abstract: Interconnect via metal-insulator-metal (MIM) fuse for integrated circuitry. Two electrode metallization features, which may be within a backend of an IC die, are coupled through a via comprising a fuse material layer. The fuse material layer passes a non-zero leakage current when a lower read voltage is applied across the electrode metallization features, and irreversibly forms an open circuit when a higher programming voltage is applied across the electrode metallization features. The fuse material layer may be a compound of a metal and oxygen and be sufficiently thin to ensure a significant leakage current at the read voltage. Joule heating of the fuse material layer may induce a void between the electrode metallization features as the leakage current through the fuse material layer increases under higher voltages, creating an open circuit.

Abstract: A cable includes a first plug, a second plug, and a controller. The first plug is configured to be connected with a host. The second plug is configured to be connected with a device. The controller is coupled between the first plug and the second plug, and is configured to monitor a connection message transferred between the host and the device, and to determine, according to the connection message, a transfer mode that the host and the device is to enter, and to set a plurality of electrical parameters to be a corresponding one set in a plurality of sets of predetermined parameters.

Abstract: Disclosed is a carbonated water machine, including a base, a mixer, a liquid supply assembly and a gas supply assembly. The base comprises a main body and an extension part, the main body is formed with a mounting cavity, the extension part is extended outward from a side wall of the main body and provided with a flow outlet, an internal space of the extension part is intersected with the mounting cavity; the mixer is arranged in the mounting cavity and formed with a mixing chamber, a gas-liquid inlet and an output port communicating with the mixing chamber, and the output port is communicated with the flow outlet; the liquid supply assembly is arranged in the mounting cavity and has a liquid outlet communicating with the gas-liquid inlet; and the gas supply assembly is disposed in the mounting cavity and has a gas outlet communicating with the gas-liquid inlet.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to an ESD protection circuit that includes diodes in the BEOL metal layers of a substrate. In embodiments, the diodes may be MSM diodes. Other embodiments may be described and/or claimed.

Abstract: Disclosed are a supercharger and a carbonated water mixing device. The supercharger includes a housing. An accommodating cavity is formed in the housing, the housing is provided with a gas-liquid inlet and an outlet communicating with the accommodating cavity, an impact interface is provided in the accommodating cavity, and the gas-liquid inlet is configured for a gas-liquid mixture to enter the accommodating cavity and impact on the impact interface.

Abstract: A method for drilling includes obtaining formation-measurement pairings, training a machine-learning model using the formation-measurement pairings, receiving measurements obtained by a tool positioned in a well formed in a formation, and generating a formation model of at least a portion of the formation using the machine-learning model and the measurements. The formation model represents one or more physical parameters of the formation, one or more structural parameters of the formation, or both.

Abstract: A cable includes a first plug, a second plug, and a controller. The first plug is configured to be connected with a host. The second plug is configured to be connected with a device. The controller is coupled between the first plug and the second plug, and is configured to monitor a connection message transferred between the host and the device, and to determine, according to the connection message, a transfer mode that the host and the device is to enter, and to set a plurality of electrical parameters to be a corresponding one set in a plurality of sets of predetermined parameters.

Abstract: A chip includes a power pin, a ground pin, a plurality of input/output (I/O) pins, a readable/writable memory, a switching circuit, and a control circuit. The I/O pins include a plurality of mapping pins and a control pin. The readable/writable memory includes a clock port, a plurality of I/O ports, and an enable port. The control circuit selectively activates or does not activate the switching circuit according to the control pin. When the switching circuit is activated, the switching circuit electrically couples the clock port, the I/O ports, and the enable port to the mapping pins respectively.

Abstract: An automatic calibration method for an onboard camera is provided, the automatic calibration method includes: receiving a calibration start command, by a vehicle equipped with the onboard camera at a predetermined position; capturing an image of a target with the onboard camera, and calibrating a parameter of the onboard camera according to the captured image; and in a case that the onboard camera is calibrated, automatically writing the calibrated parameter of the onboard camera into a configuration file.

Abstract: A method for drilling includes obtaining formation-measurement pairings, training a machine-learning model using the formation-measurement pairings, receiving measurements obtained by a tool positioned in a well formed in a formation, and generating a formation model of at least a portion of the formation using the machine-learning model and the measurements. The formation model represents one or more physical parameters of the formation, one or more structural parameters of the formation, or both.

Abstract: A method of fabricating a semiconductor device is provided. A substrate is provided. The substrate includes a first region, a second region and a third region. An isolation structure is formed on the substrate in the first and the second region. A removing process is performed to remove the isolation structure in the first region, so as to form a first opening exposing a top surface of the substrate. A gate structure is formed on the substrate, covering a part of the substrate in the first region and a part of the isolation structure in the second region. A first doped region of a first conductive type is formed at one side of the gate structure in the first region, and a second doped region of the first conductive type is formed in the substrate in the third region.

Abstract: A flexible server configuration system includes a connector array including a plurality of slots and a first jumper board configured to removably engage with the connector array by connecting to a first set of consecutive slots from the plurality of slots. The first jumper board is configured to disengage and reengage from the connector array to connect with a different set of consecutive slots from the plurality of slots. The system further includes a first set of at least one peripheral device, each connected to one of the plurality of slots, and a first node including at least one first node processor. The first node is connected to two of the plurality of slots.

Abstract: A silicon carbide (SiC) semiconductor element includes a semiconductor layer, a dielectric layer on a surface of the semiconductor layer, a gate electrode layer on the dielectric layer, a first doped region, a second doped region, a shallow doped region and a third doped region. The semiconductor layer is of a first conductivity type. The first doped region is of a second conductivity type and includes an upper doping boundary spaced from the surface by a first depth. The shallow doped region is of the second conductivity type, and extends from the surface to a shallow doped depth. The second doped region is adjacent to the shallow doped region and is at least partially in the first doped region. The third doped region is of the second conductivity type and at least partially overlaps the first doped region.