Abstract: Provided are deposition processes including deposition of a thin, protective Mo layer using a molybdenum chloride (MoClx) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoOyXz) precursor. The protective Mo layer enables Mo fill using an MoOyXz precursor without oxidation of the underlying surfaces. Also provided are in-situ clean processes in which a MoClx precursor is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and/or fill a feature.

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal layer of boron (B) on a substrate. The substrate generally includes a feature to be filled with tungsten with the boron layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a continuous flow of hydrogen and pulses of fluorine-containing tungsten precursor in a pulsed CVD process. The conformal boron layer is converted to a conformal tungsten layer.

Abstract: A high-speed circuit with a high-voltage (HV) driver circuit. The high-speed circuit has a driver circuit and a level shifter. The driver circuit includes HV components which are operated in an HV domain. The level shifter includes low-voltage (LV) components which are operated in an LV domain. The level shifter translates signals from the LV domain to the HV domain to generate control signals for the driver circuit. The high-speed circuit may include a protection voltage generator converting a power supply voltage and a power ground voltage to generate a first direct-current bias voltage (VBP) and a second direct-current bias voltage (VBN) to bias the LV components of the level shifter. The LV components of the level shifter include input transistors and protection transistors. Gate voltages of the protection transistors may be tied to VBP or VBN.

Abstract: Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.

Abstract: A high-speed circuit with a high-voltage (HV) driver circuit. The high-speed circuit has a driver circuit and a level shifter. The driver circuit includes HV components which are operated in an HV domain. The level shifter includes low-voltage (LV) components which are operated in an LV domain. The level shifter translates signals from the LV domain to the HV domain to generate control signals for the driver circuit. The high-speed circuit may include a protection voltage generator converting a power supply voltage and a power ground voltage to generate a first direct-current bias voltage (VBP) and a second direct-current bias voltage (VBN) to bias the LV components of the level shifter. The LV components of the level shifter include input transistors and protection transistors. Gate voltages of the protection transistors may be tied to VBP or VBN.

Abstract: A monolithic tandem photovoltaic cell includes a first electrode; a CIGS light absorption section on the first electrode; an interconnecting layer on the CIGS light absorption section; and a perovskite light absorption section on the inter-connecting layer. The interconnecting layer has a polished surface on which the perovskite light absorption section is formed. The interconnecting layer provides an electrically conducting and optically transparent connection between the CIGS light absorption section and the perovskite light absorption section.

Abstract: This invention relates a process for preparing octreotide and derivatives thereof. The starting material, Thr(ol)(tBu)-2-chlorotrityl resin is coupled with the various amino acids. The straight peptide-resin of D-Phe-Cys(Trt)-Phe-D-Trp(Boc)-Lys(Boc)-Thr(tBu)-Cys(Trt)-Thr(ol)(tBu)-2-chlorotrityl resin or D-Phe-Cys(Trt)-Tyr(tBu)-D-Trp(Boc)-Lys(Boc)-Thr(tBu)-Cys(Trt)-Thr(ol)(tBu)-2-chlorotrityl resin was obtained. Cleavage of the peptide from the resin was achieved by strong acid solution.