Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, a conductive filler, and a titanium-containing dielectric filler. The polymer matrix has a fluoropolymer. The titanium-containing dielectric filler has a compound represented by a general formula of MTiO3, wherein the M represents transition metal or alkaline earth metal. The total volume of the PTC material layer is calculated as 100%, and the titanium-containing dielectric filler accounts to for 5-15% by volume of the PTC material layer.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, and a conductive filler. The polymer matrix has a fluoropolymer. The total volume of the PTC material layer is calculated as 100%, and the fluoropolymer accounts for 47-62% by volume of the PTC material layer. The fluoropolymer has a melt viscosity higher than 3000 Pa·s.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g/10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: A method for optimizing write parameters of an optical storage medium is provided. The method is adapted for a recording device using the optical storage medium. The method includes loading the optical storage medium having a test area into the recording device, determining a combination of an original write strategy and an original write power according to the optical storage medium, writing test data into the test area with the combination of the original write strategy and the original write power for dynamically adjusting the combination of the original write strategy and the original write power to obtain a combination of an optimal write strategy and an optimal write power, and writing data into the optical storage medium with the combination of the optimal write strategy and the optimal write power.

Abstract: A layer jump control apparatus and method is provided to control an optical drive during a layer jump operation. According to the magnitude variations of a focus error signal during a predetermined period, the invention estimates the position and relative velocity of a pickup head and a disk so as to dynamically modify the magnitude of a braking force, causing the optical pickup head to make a stable jump on the target layer, then brake and finally reactivate a closed-loop focus control process without going into an out of lock state.

Abstract: A method for optimizing write parameters of an optical storage medium is provided. The method is adapted for a recording device using the optical storage medium. The method includes loading the optical storage medium having a test area into the recording device, determining a combination of an original write strategy and an original write power according to the optical storage medium, writing test data into the test area with the combination of the original write strategy and the original write power for dynamically adjusting the combination of the original write strategy and the original write power to obtain a combination of an optimal write strategy and an optimal write power, and writing data into the optical storage medium with the combination of the optimal write strategy and the optimal write power.

Abstract: The specification discloses a braking method for a single-phase motor, which is applied to a single-phase DC brushless motor driven by a three-phase motor driving IC. The invention uses a control unit to compute the rotational speed of the single-phase motor according to a rotation number signal generated by the motor rotational axis. When the rotational speed is below a threshold, the motor driving IC is controlled to stop rotating the single-phase motor. Through the single-phase motor braking method disclosed herein, the problem of unable to determine the rotational direction of a single-phase motor within a three-phase motor driving IC existing in the prior art can be solved by merely modifying the program in the control unit without adding system elements.

Abstract: A design of a test chip for determining the dopant uniformity of an ion implantation within a area of the order of several tens of microns is disclosed and a method for it's measurement provided. The object of the test chip is particularly adapted to sense dopant concentration variations caused by the variation of density in the spot of the ion implantation beam and can be used to determine optimal overlap of adjacent beam scans. The test chips use arrays of MOSFETs arranged in a pattern with channel lengths parallel to the path of the ion implantation beam and provide a contiguous set of incremental concentration measurements across the paths of the ion implantation beam scans. The gate threshold voltages are measured and related to the active dopant impurity concentration in the channel area. The width of the concentration increment is therefore equal to the channel length.

Abstract: A design of a test chip for determining the dopant uniformity of an ion implantation within a area of the order of several tens of microns is disclosed and a method for it's measurement provided. The object of the test chip is particularly adapted to sense dopant concentration variations caused by the variation of density in the spot of the ion implantation beam and can be used to determine optimal overlap of adjacent beam scans. The test chips use arrays of MOSFETs arranged in a pattern with channel lengths parallel to the path of the ion implantation beam and provide a contiguous set of incremental concentration measurements across the paths of the ion implantation beam scans. The gate threshold voltages are measured and related to the active dopant impurity concentration in the channel area. The width of the concentration increment is therefore equal to the channel length.