Abstract: Systems and methods for supporting both batch processing and streaming data applications, to load and process data incrementally, while providing a near-constantly materialized dataset based on raw blockchain data, are described. For example, the system may receive first on-chain data in a first format via a first input stream, wherein the first on-chain data originates from a blockchain node of a blockchain network. The system may transform the first on-chain data to a second format for storage in a second dataset, wherein the second format comprises an unbounded table.

Abstract: The present disclosure provides a self-learning collaborative control method for active steering and yaw moment for a motor vehicle, including a first step of constructing fundamental formulas which are stored in a vehicle ECU, and a second step of calculating an active steering angle ?C and a yaw moment Mc on line by the vehicle ECU according to following sub-steps during a driving process of the motor vehicle, and controlling a driving state of the motor vehicle according to ?C and Mc. The second step includes a first sub-step of collecting raw real-time parameter values, a second sub-step of performing calculation by the identifier and the control target reference model, a third sub-step of calculating ?C and Mc. The present disclosure can realize the self-learning collaborative control of active steering and yaw moment without requiring a system control model and correct a driver's steering operation.

Abstract: Systems and methods for a unified approach that is compatible with all blockchains, protocols, etc. The systems and methods use a bifurcated indexing system with a dynamically selected application service. The systems and methods bifurcate the indexing process into a storage layer and a compute layer.

Abstract: A four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide, includes a flexible base. A ground plane, a radiation patch and a feeder are arranged on the flexible base. There are several resonant tanks on the feeder and the radiation patch. The flexible base is made of insulating flexible material, and the feeder, the radiation patch and the ground plane are made of conductive flexible material. The four-notch flexible wearable ultra-wideband antenna fed by coplanar waveguide of the present application can be prepared by layer-by-layer assembly technology, spray printing or printed circuit board technology, and has the advantages of miniaturization and low profile, compact structure, convenient production, good conformality, wearable and other advantages.

Abstract: An article (100) has a polyester film backing (110) and a primer layer (120) including a carboxylated styrene butadiene copolymer crosslinked with a polyfunctional aziridine disposed on a major surface of the polyester film backing (110). Another article includes a polyester backing (110), a primer layer (120) including a carboxylated styrene butadiene copolymer crosslinked with a polyfunctional aziridine disposed on a major surface of the polyester backing (110), and a phenolic layer (140) disposed on the primer layer (120) on a surface opposite the polyester backing (110). The phenolic layer (120) can include abrasive particles (160). Processes for making the articles are also described, as well as methods for abrading a workpiece and improving adhesion between a polyester film backing (110) and a phenolic layer (120) on the polyester backing (110).

Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: Connectors for use with high-speed signals. Mating connectors may include interlocking components that control the mated position of the connectors such that wipe distance can be reduced. These components may be compact such that they can be integrated into connectors with standardized exterior dimensions. They may be integrated into mating guides of the mating connectors. For one of the mating connectors, such a component may be a locking member disposed in and curving out of its guide such that the locking member mates with a matching feature of a component in the guide of the other connector. As the connectors are secured by these components, the conductive elements may be shorter than the lengths required by standards, which reduces the stub and therefore increases signal integrity. Such a configuration provides higher signal integrity at higher speeds, while conforming to standards that constrain mating and mounting interfaces.

Abstract: Systems and methods for creating a reorganization-immune blockchain index using mono-increasing sequence records are described. For example, the system may receive on-chain data for a plurality of blocks, wherein the plurality of blocks comprises a first block comprising a first event of a plurality of blockchain events within the on-chain data. The system may determine a first sequence number for the first event, wherein the first sequence number is based on a mono-increasing sequence record.

Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: Systems and methods for a unified approach that is compatible with all blockchains, protocols, etc. The systems and methods use a bifurcated indexing system with a dynamically selected application service. The systems and methods bifurcate the indexing process into a storage layer and a compute layer.

Abstract: Systems and methods for creating a reorganization-immune blockchain index using mono-increasing sequence records are described. For example, the system may receive on-chain data for a plurality of blocks, wherein the plurality of blocks comprises a first block comprising a first event of a plurality of blockchain events within the on-chain data. The system may determine a first sequence number for the first event, wherein the first sequence number is based on a mono-increasing sequence record.

Abstract: Systems and methods for a unified approach that is compatible with all blockchains, protocols, etc. The systems and methods use a bifurcated indexing system with a dynamically selected application service. The systems and methods bifurcate the indexing process into a storage layer and a compute layer.

Abstract: Systems and methods for supporting both batch processing and streaming data applications, to load and process data incrementally, while providing a near-constantly materialized dataset based on raw blockchain data, are described. For example, the system may receive first on-chain data in a first format via a first input stream, wherein the first on-chain data originates from a blockchain node of a blockchain network. The system may transform the first on-chain data to a second format for storage in a second dataset, wherein the second format comprises an unbounded table.

Abstract: A memory device includes a substrate, a stack over the substrate, and a gate line slit extending along a first direction and dividing the stack into two portions. The stack includes a connection portion that connects the two portions of the stack. The connection portion includes at least two sub-connection portions along a second direction perpendicular to the first direction. The gate line slit includes at least two portions along the first direction. Each sub-connection portion is between adjacent two portions of the gate line slit.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device comprises a substrate, a stack structure on the substrate, and at least one gate line slit extending along a first direction substantially parallel to a top surface of the substrate, and dividing the stack structure into at least two portions. The stack structure includes at least one connection portion that divides the at least one gate line slit, and conductively connects the at least two portions.

Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: The present disclosure generally relates to a reactor, in particular to a multiphase interface reactor applicable to chemistry, chemical industry, food, medicine, cosmetics and other fields. The reactor comprises a reaction cylinder; at least one feed port opened in the reaction cylinder; a stirring device, at least a part of the stirring device being located inside the reaction cylinder; at least one cylinder including a first cylinder and a second cylinder, wherein, the reaction cylinder, the first cylinder, and the second cylinder communicate with each other; an annular space is formed between the reaction cylinder and the second cylinder, so that at least part of a reaction product is allowed to enter the annular space from the reaction cylinder, and enter the first cylinder from the annular space; and at least one discharge port arranged on the first cylinder.

Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device comprises a substrate, a stack structure on the substrate, and at least one gate line slit extending along a first direction substantially parallel to a top surface of the substrate, and dividing the stack structure into at least two portions. The stack structure includes at least one connection portion that divides the at least one gate line slit, and conductively connects the at least two portions.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the method comprises: providing a substrate; forming an alternating stack over the substrate, the alternating stack comprising a plurality of tiers of sacrificial layer/insulating layer pairs extending along a first direction substantially parallel to a top surface of the substrate; forming a plurality of tiers of word lines extending along the first direction based on the alternating stack; forming at least one connection portion conductively connecting two or more of the word lines of the plurality of tiers of word lines; and forming at least one metal contact via conductively shared by connected word lines, the at least one metal contact via being connected to at least one metal interconnect.