Patents by Inventor Yao-Jun Zhang

Yao-Jun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making nano-scale film
    Patent number: 9555562
    Abstract: A method for making a nano-scale film includes the steps of: (a) providing a suspension including an organic solvent and a number of nano-scale particles dispersed therein; (b) dropping/releasing the suspension into a liquid having a specific gravity greater than that of the nano-scale particles; and (c) forming a uniform film of nano-scale particles on the surface of the liquid.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: January 31, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Li-Na Zhang, Yao-Jun Zhang, Yi Ren, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
  • Method for making nano-scale film
    Publication number: 20080157435
    Abstract: A method for making a nano-scale film includes the steps of: (a) providing a suspension including an organic solvent and a number of nano-scale particles dispersed therein; (b) dropping/releasing the suspension into a liquid having a specific gravity greater than that of the nano-scale particles; and (c) forming a uniform film of nano-scale particles on the surface of the liquid.
    Type: Application
    Filed: November 2, 2007
    Publication date: July 3, 2008
    Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.
    Inventors: Li-Na Zhang, Yao-Jun Zhang, Yi Ren, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
  • Method for improving electrical characteristics of oxide film grown on gallium arsenide by plasma treatment
    Publication number: 20020064962
    Abstract: A method is provided for improving electrical characteristics of an oxide film grown on a III-V substrate by plasma treatment and being used in fabricating semiconductor, integrated circuit, and photoelectric elements. The method includes steps of a) providing the III-V substrate, b) growing the oxide film on said III-V substrate, and c) placing the oxide grown on the III-V substrate in a plasma system.
    Type: Application
    Filed: April 11, 2001
    Publication date: May 30, 2002
    Inventors: Yeong-Her Wang, Mau-Phon Hong, Yao-Jun Zhang