Patents by Inventor Yaoyao CHU

Yaoyao CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11855131
    Abstract: A preparation method of a semiconductor structure includes: providing a substrate, and forming a groove on the substrate by etching; forming a first dielectric layer on a side wall of the groove; forming a first electrode on the bottom of the groove and on an inner surface of the first dielectric layer; forming a second dielectric layer on a surface of the first electrode; and forming a second electrode on a surface of the second dielectric layer.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: December 26, 2023
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Xifei Bao, Yaoyao Chu
  • Publication number: 20210391415
    Abstract: A preparation method of a semiconductor structure includes: providing a substrate, and forming a groove on the substrate by etching; forming a first dielectric layer on a side wall of the groove; forming a first electrode on the bottom of the groove and on an inner surface of the first dielectric layer; forming a second dielectric layer on a surface of the first electrode; and forming a second electrode on a surface of the second dielectric layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: December 16, 2021
    Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Xifei BAO, Yaoyao CHU