Patents by Inventor Yaping FAN

Yaping FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide-based full-spectrum-responsive photodetector and method for producing same
    Patent number: 11710801
    Abstract: The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: July 25, 2023
    Assignee: Taiyuan University of Technology
    Inventors: Yanxia Cui, Yaping Fan, Xianyong Yan, Guohui Li, Yuan Tian
  • SILICON CARBIDE-BASED FULL-SPECTRUM-RESPONSIVE PHOTODETECTOR AND METHOD FOR PRODUCING SAME
    Publication number: 20220052218
    Abstract: The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.
    Type: Application
    Filed: October 29, 2021
    Publication date: February 17, 2022
    Inventors: Yanxia CUI, Yaping FAN, Xianyong YAN, Guohui LI, Yuan TIAN