Abstract: Notch detection methods and modules are provided for efficiently estimating a position of a wafer notch. Capturing an image of specified region(s) of the wafer, a principle angle is identified in a transformation, converted into polar coordinates, of the captured image. Then the wafer axes are recovered from the identified principle angle as the dominant orientations of geometric primitives in the captured region. The captured region may be selected to include the center of the wafer and/or certain patterns that enhance the identification and recovering of the axes. Multiple images and/or regions may be used to optimize image quality and detection efficiency.

Abstract: A system for providing illumination to a measurement head for optical metrology is configured to combine illumination beams from a plurality of illumination sources to deliver illumination at one or more selected wavelengths to the measurement head. The intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. Illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract: A system for providing illumination to a measurement head for optical metrology is configured to combine illumination beams from a plurality of illumination sources to deliver illumination at one or more selected wavelengths to the measurement head. The intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. Illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract: The disclosure is directed to systems for providing illumination to a measurement head for optical metrology. In some embodiments of the disclosure, illumination beams from a plurality of illumination sources are combined to deliver illumination at one or more selected wavelengths to the measurement head. In some embodiments of the disclosure, intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. In some embodiments of the disclosure, illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract: Notch detection methods and modules are provided for efficiently estimating a position of a wafer notch. Capturing an image of specified region(s) of the wafer, a principle angle is identified in a transformation, converted into polar coordinates, of the captured image. Then the wafer axes are recovered from the identified principle angle as the dominant orientations of geometric primitives in the captured region. The captured region may be selected to include the center of the wafer and/or certain patterns that enhance the identification and recovering of the axes. Multiple images and/or regions may be used to optimize image quality and detection efficiency.

Abstract: Integrated measurement apparatus and method for measuring layer thickness and bow in a wafer. The apparatus comprises: a monochromatic light source, a white light source, a first switch for switching between the white light source and the monochromatic light source, a plurality of optical heads for directing light from the switched light source onto different locations on a semiconductor wafer surface, a first optical processor for spectral processing of reflected light from the wafer, a second optical processor for processing of reflected light to determine an extent of bow in the wafer, and a second optical switch to switch reflected light from the wafer between the first optical processor and the second optical processor so that the white light is spectrally processed to determine layer thicknesses and the monochromatic light is processed for bowing.

Abstract: Integrated measurement apparatus and method for measuring layer thickness and bow in a wafer. The apparatus comprises: a monochromatic light source, a white light source, a first switch for switching between the white light source and the monochromatic light source, a plurality of optical heads for directing light from the switched light source onto different locations on a semiconductor wafer surface, a first optical processor for spectral processing of reflected light from the wafer, a second optical processor for processing of reflected light to determine an extent of bow in the wafer, and a second optical switch to switch reflected light from the wafer between the first optical processor and the second optical processor so that the white light is spectrally processed to determine layer thicknesses and the monochromatic light is processed for bowing.

Abstract: A method and apparatus for active pyrometric measurement of the temperature of a body whose emissivity varies with wavelength. The emissivity is inferred from reflectivity measured at two wavelengths in an irradiation wavelength band and extrapolated to a wavelength in an emission wavelength band. The extrapolated emissivity is used to correct a blackbody estimate of the temperature of the body in the emission wavelength band. The extrapolation, being temperature-dependent, is done iteratively. Both reflectivity and emission measurements are performed via a common optical head that is shaped, and is positioned relative to the body, so that the optical head has a sufficiently large solid angle of acceptance that the measured temperature is independent of superficial roughness of the body.

Abstract: A method of remotely measuring the temperature of a body, such as a semiconductor wafer, whose transparency varies with both wavelength and temperature and is characterized by an optical absorption edge. The body is illuminated at wavelengths on either side of the optical absorption edge. Based on the measured reflectivity at wavelengths shorter than the optical absorption edge, the direct reflectivity at wavelengths longer than the optical absorption edge is predicted and used to estimate the component of total reflectivity, at wavelengths longer than the optical absorption edge, which corresponds to propagation through the body and reflection back through the body. Light reflected from the body, measured in an "active" channel, is distinguished from light emitted passively by the body and measured in a "passive" channel. In the case of an opaque body, this allows the estimation of the emissivity of the body, and a temperature estimate based on Planck's law.