Patents by Inventor Yasakazu Seki

Yasakazu Seki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer semiconductor device having an amorphous carbon and silicon layer
    Patent number: 4768072
    Abstract: In the typical embodiments of the invention described in the specification, a radiation detector has a single crystal silicon substrate coated with an amorphous semiconductor film containing silicon and carbon, metal electrodes being provided. Amorphous layers are formed by a plasma CVD method using mixtures of monosilane gas and acetylene or tetrafluorocarbon gas at a pressure of 10 Torr with an applied voltage of 400-800 volts providing increased band gaps and higher resistivity to reduce current leakage.
    Type: Grant
    Filed: October 2, 1986
    Date of Patent: August 30, 1988
    Assignees: Fuji Electric Corporate Research and Development Co., Ltd., Fuji Electric Co. Ltd.
    Inventors: Yasakazu Seki, Noritada Sato, Masaya Yabe