Abstract: A toner including: a binder resin; a releasing agent; and a colorant, wherein the binder resin contains a crystalline polyester resin and a non-crystalline polyester resin, wherein the releasing agent has an endothermic peak temperature of 60° C. to 80° C. at the second temperature rising in differential scanning calorimetry, and wherein the releasing agent is an ester wax which satisfies the following expressions (1) and (2): 1.1 Pa·s??*a?2.0 Pa·s . . . Expression (1) 0.001??*b/?*a?1.00 . . . Expression (2) where in Expressions (1) and (2), ?*a denotes a complex viscosity (Pa·s) determined by measuring a dynamic viscoelasticity of the releasing agent at a measurement frequency of 6.28 rad/s, and ?*b denotes a complex viscosity (Pa·s) determined by measuring a dynamic viscoelasticity of the releasing agent at a measurement frequency of 62.8 rad/s.

Abstract: When an analog-recorded tape cassette is loaded into an apparatus which can perform an analog recording/reproduction and a digital recording/reproduction by a same video tape and is reproduced, an alarm is displayed. When a tape cassette in which a transport stream of different specifications or a digital video signal of a system other than the MPEG2 system has been recorded is loaded into the apparatus and reproduced, an alarm is displayed. The user watches a smart file picture plane and recognizes recording system information of a program to be monitored from now on. If the program to be reproduced has been digitally recorded, the user switches the input to a digital video input. If the program to be reproduced has been analog-recorded, the user switches the input to an analog video input.

Abstract: An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.

Abstract: An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.