Abstract: A semiconductor manufacturing device includes: a turntable configured to be rotatable and having a first surface; a polishing pad provided on the first surface; a first support portion configured to rotatably hold the turntable; a top ring having a second surface and including a suction mechanism that holds an object to be processed on the second surface; a second support portion configured to rotatably hold the top ring; a first member to come into contact with the turntable or top ring; a second member to come into contact with the polishing pad or suction mechanism and with the turntable or top ring via the first member; and a first AE sensor to come into contact with the second member.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, a lighting device includes a first light source, a body section and a light distribution section. The first light source includes a light emitting element. The body section includes an attachment portion on one end portion. The first light source is attached to the attachment portion. The light distribution section is provided on the end portion of the body section and injected with light radiated from the first light source. The light distribution section has a flat shape. A peripheral portion of the light distribution section in a direction orthogonal to a central axis of the lighting device protrudes from periphery of the end portion of the body section.

Abstract: According to one embodiment, a lighting device includes: a body section; a light source; a globe; and a reflecting section. The light source is provided on one end portion of the body section and has a light emitting element. The globe is provided so as to cover the light source. The reflecting section is provided opposite to the light source. A surface of the reflecting section on opposite side from the light source side is exposed from the globe.

Abstract: A luminaire according to embodiments includes a body portion, a light source provided at one end portion of the body portion and having a light-emitting element, a globe provided so as to cover the light source, and a thermal transfer portion thermally joined to at least either one of the globe or a thermal radiating surface of the body portion on the end portion side. Then, an end surface of the thermal transfer portion on the side of the globe is exposed from the globe.

Abstract: According to one embodiment, a luminaire includes a substrate, a light-emitting section mounted on the substrate and including a light-emitting element, an outer frame body provided with a through-hole in a bottom surface, provided on the substrate to locate the light-emitting section in the through-hole, and made of an insulator, and a cylindrical reflector in the outer frame body, including a first opening end and a second opening end having an area larger than the first opening end, and provided on the bottom surface with the first opening end. A step is absent in at least one part of the part between an inner wall surface of the through-hole and an inner wall surface of the reflector. An area of a third opening end on the substrate side of the through-hole is smaller than an area of a fourth opening end on the reflector side of the through-hole.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Abstract: A lighting device according to an embodiment includes a main body unit, a light source which is provided at one end portion of the main body unit, and includes a light emitting element, a globe which is provided so as to cover the light source, and a heat conducting unit whose end surface on the globe side is exposed on the outside of the globe, and which thermally bonds the globe and a heat radiating surface of the main body unit on the end portion side. The heat conducting unit includes a plate-shaped unit in which a first plate-shaped body, and a second plate-shaped body which crosses the first plate-shaped body are integrally formed.

Abstract: A luminaire according to embodiments includes a body portion, a light source provided at one end portion of the body portion and having a light-emitting element, a globe provided so as to cover the light source, and a thermal transfer portion thermally joined to at least either one of the globe or a thermal radiating surface of the body portion on the end portion side. Then, an end surface of the thermal transfer portion on the side of the globe is exposed from the globe.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Abstract: According to one embodiment, a lighting device includes a body section, a light source, a globe, and a heat transfer section. The light source is provided on one end portion of the body section. The light source includes a light emitting element. The globe is provided so as to cover the light source. The heat transfer section in thermal contacts with at least one of an inner surface of the globe and a heat dissipation surface on the end portion side of the body section.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

Abstract: According to one embodiment, a light emitting device includes a package member, a light emitting element provided in the package member, a first phosphor layer and a second phosphor layer. A first phosphor layer is provided on the light emitting element and has a first phosphor. A second phosphor layer is provided on the first phosphor layer and has a second phosphor. A luminescent efficiency of the first phosphor is higher than a luminescent efficiency of the second phosphor.

Abstract: A semiconductor light-emitting device includes a substrate having light transmission characteristics, a light emission layer on a surface side of the substrate, and which emits light when being energized, and a pair of electrodes to energize the light emission layer, wherein a surface of the substrate which is located opposite to the light emission layer is formed to include groove portion through which light generated from the light emission layer and then entering the substrate is emitted from the substrate.