Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.

Abstract: To provide a lithographic printing plate precursor which generates no stains in the non-image area and is also excellent in development latitude. Disclosed is a lithographic printing plate precursor comprising a support and a photosensitive layer, said lithographic printing plate precursor further comprising a subbing layer containing a maleamic acid (co)polymer, in which at least one hydrogen atom on a nitrogen atom is substituted with an onium group, provided between the photosensitive layer and the support.

Abstract: A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.

Abstract: Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film 11) which absorbed water from the atmosphere, and a substrate (wafer W) having a trench 100 formed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film 13) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation film 13a is formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper film 15 is formed on the surface of the second base film by CVD by using a copper organic compound as a material.

Abstract: It is intended to enable an apparatus for synthesizing urea and a method for revamping the same to place a heavy condenser at a relatively low position and to circumvent problems associated with letting a process fluid flow within a tube in the condenser. The present invention provides an apparatus for synthesizing urea including: a synthesis reactor for reacting NH3 with CO2 to obtain a urea synthesis solution containing urea, unreacted NH3 and CO2, and water; a stripper for stripping the urea synthesis solution with use of at least a part of raw material CO2 to separate a gas containing the unreacted NH3 and CO2; a vertical submerged condenser having a shell and tube structure for condensing the gas in an absorbing medium on the shell side while cooling the gas with a cooling medium passing through the tube side; and recycling means for recycling a liquid obtained from this condenser to the synthesis reactor, wherein this condenser is placed below the synthesis reactor.

Abstract: In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.

Abstract: It is intended to enable more smooth operation in an apparatus for synthesizing urea by circumventing the downward flow of a urea synthesis solution which is a gas-liquid two-phase flow and stabilizing the flow of the urea synthesis solution still remaining the gas-liquid two-phase flow and to reduce energy loss by giving smaller flow resistance.

Abstract: A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

Abstract: A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.

Abstract: Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed.

Abstract: A granulator, having: a granulation unit having a bottom floor with a perforated plate as its bottom part; an upper air-supplying pipe for supplying a fluidizing air to the bottom floor of the granulation unit; a lower air-supplying pipe; air-spouting pipes, each of which is branched from the lower air-supplying pipe, and has an opening in the bottom floor of the perforated plate, for jetting the air into the granulation unit; and spray nozzles for spraying a granulation raw material liquid, which each are provided in the center of an air outlet of the air-spouting pipe, or a granulator, having: the bottom floor; the air-supplying pipe; and spray nozzles for spraying a granulation raw material liquid, which each are provided in an opening in the bottom floor of the perforated plate, and use a high-pressure atomizing air as an auxiliary gas, wherein, in each granulator, the spray nozzles are formed in triangular arrangement.

Abstract: It is intended to enable an apparatus for synthesizing urea and a method for revamping the same to place a heavy condenser at a relatively low position and to circumvent problems associated with letting a process fluid flow within a tube in the condenser. The present invention provides an apparatus for synthesizing urea including: a synthesis reactor for reacting NH3 with CO2 to obtain a urea synthesis solution containing urea, unreacted NH3 and CO2, and water; a stripper for stripping the urea synthesis solution with use of at least a part of raw material CO2 to separate a gas containing the unreacted NH3 and CO2; a vertical submerged condenser having a shell and tube structure for condensing the gas in an absorbing medium on the shell side while cooling the gas with a cooling medium passing through the tube side; and recycling means for recycling a liquid obtained from this condenser to the synthesis reactor, wherein this condenser is placed below the synthesis reactor.

Abstract: In a process and an apparatus for synthesizing urea which synthesize urea from ammonia and carbon dioxide, the operating condition can be grasped easily and with good accuracy. A process for synthesizing urea which includes: a reaction step of obtaining a urea synthesis solution which contains urea, unreacted ammonia, unreacted carbon dioxide and water by causing ammonia and carbon dioxide to react with each other; a stripping step of separating a gas mixture containing the unreacted ammonia and the unreacted carbon dioxide by stripping the urea synthesis solution by using at least a portion of raw material carbon dioxide; a condensing step of obtaining a condensed liquid by condensing the gas mixture in an absorbing medium while cooling the gas mixture; a recycling step of recycling the condensed liquid to the reaction step; and a step of measuring the density of the condensed liquid online. An apparatus for carrying out this process is provided.

Abstract: It is intended to enable more smooth operation in an apparatus for synthesizing urea by circumventing the downward flow of a urea synthesis solution which is a gas-liquid two-phase flow and stabilizing the flow of the urea synthesis solution still remaining the gas-liquid two-phase flow and to reduce energy loss by giving smaller flow resistance.

Abstract: An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.

Abstract: Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material.

Abstract: A vaporizer for vaporizing a force-fed liquid source material in a depressurized atmosphere to generate a source gas and discharging the source gas together with a carrier gas, the vaporizer includes a liquid reservoir chamber for temporarily storing the force-fed liquid source material; a vaporization chamber communicating with the liquid reservoir chamber via a valve port. Further the vaporizer includes a valve body adapted to sit on a vale seat surrounding the valve port of the liquid reservoir chamber; an actuator for driving the valve body; a carrier gas injection hole formed at a side of the valve body facing the valve port; and a discharge port for discharging the source gas from the vaporization chamber. By virtue of a specific arrangement of the carrier gas injection hole, the liquid source material is prevented from remaining unvaporized at a downstream side of the valve port.

Abstract: To provide a lithographic printing plate precursor which generates no stains in the non-image area and is also excellent in development latitude. Disclosed is a lithographic printing plate precursor comprising a support and a photosensitive layer, said lithographic printing plate precursor further comprising a subbing layer containing a maleamic acid (co)polymer, in which at least one hydrogen atom on a nitrogen atom is substituted with an onium group, provided between the photosensitive layer and the support.

Abstract: A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).

Abstract: A reactor including a reactor vessel and heat exchange tubes provided in the reactor vessel. The reactor vessel includes a tubesheet and is configured to receive a reaction fluid. The tubesheet has a first plate member configured to contact the reaction fluid and a second plate member configured to not contact the reaction fluid. Heat exchange tubes are provided in the reactor vessel and fixed to the first plate member. The heat exchange tubes are configured to receive a heat exchange medium. At least a portion of the first plate member configured to contact the reaction fluid is made of a metal that has a high corrosion-resistance against the reaction liquid, and the second plate member is made of a metal that has a low corrosion-resistance against the reaction liquid. The second plate member is detachably fixed to a remainder of the reactor vessel.