Patents by Inventor Yasuhiko NISHIO

Yasuhiko NISHIO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing silicon carbide semiconductor device
    Patent number: 9685566
    Abstract: A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: June 20, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventors: Daisuke Chikamori, Yasuhiko Nishio, Naoki Yutani
  • METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20130196494
    Abstract: A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.
    Type: Application
    Filed: November 9, 2012
    Publication date: August 1, 2013
    Inventors: Daisuke CHIKAMORI, Yasuhiko NISHIO, Naoki YUTANI