Abstract: The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.

Abstract: There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam 80 as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.

Abstract: An apparatus has a holder member (21) which holds a sample (3), and a removing beam source (13) which irradiates an inert ion beam onto a cross section (4) of the sample (3) held by a holder member (21) and removes a fracture layer on the cross section (4). Then, the removing beam source (13) is disposed on the holding end side of the sample (3) with respect to the normal L of the cross section (4) so that the irradiating direction of the inert ion beam is tilted at the tilt angle ? to the normal L with respect to the cross section (4).

Abstract: An apparatus for processing and observing a sample has a sample stage for supporting a sample at a preselected location thereof, a focused ion beam irradiation system for irradiating the sample with a focused ion beam along an optical axis to cut out a portion from the sample, and a side entry stage disposed over the sample stage and extending slantingly with respect to the optical axis of the focused ion beam irradiated by the focused ion beam irradiation system. The side entry stage has a microscope sample holder for picking up the cut-out sample portion directly from the preselected location of the sample and for supporting the sample portion. The microscope sample holder is configured to be removed from the side entry stage while supporting the sample portion and to be connected to an entry stage of a microscope device for observing the sample portion.

Abstract: An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.

Abstract: The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.

Abstract: A sample manufacturing device comprises a sample stage to which an original sample is fixed, a focused ion beam irradiation system for irradiating a focused ion beam from a vertical direction to a specified place on the original sample, and a side entry stage, arranged diagonally above the sample stage, for inserting a sample stage for specified observation in a diagonal direction with respect to the vertical direction, and supporting the inserted sample holder for observation so as to be capable of movement in the diagonal direction. A test piece taken out from a specified place of the original sample is fixed to a tip section of the sample holder for specified observation supported on the side entry stage.

Abstract: A signal component for scanning a processing range and a signal component for synchronizing to movement of a moving stage are superimposed on an ion beam scanning signal. Using such a scanning signal, processing is carried out while moving a sample stage. In this way, it is possible to carry out processing using a focused ion beam device in a reduced amount of time for a plurality of samples.

Abstract: A thin film is etched by irradiating charged particles to a surface of the thin film. An etching time of the thin film is measured by observing a change in intensity of secondary charged particles emitted by etched portions of the thin film. A thickness of the thin film is calculated in accordance with the measured etching time.

Abstract: A liquid metal ion source has an emitter electrode for emitting ions, an extraction electrode, proximate the emitter electrode for generating a focused electric field at a tip of the emitter electrode, and a suppression electrode proximate the extraction electrode for adjusting the strength of the focused electric field generated at the tip of the emitter electrode so that metal ions are extracted from liquid metal covering the tip of the emitter electrode at a desired emission current value. A storage device stores a function defining a relationship between variation (&Dgr;Ie) in current of the emitter electrode and variation (&Dgr;Vsup) in voltage of the suppression electrode as a function &Dgr;Ie=F(&Dgr;Vsup), with the voltage (Vext) of the extraction electrode being at a fixed value.

Abstract: Terminals of individual registered members of service users 3 and service providers 4, and terminals of a hosting business association 2 are connected with a communication mean 5, member information recording media 6 which can be attached to the terminals of the individual members are delivered, prescribed points are given to the service provider 4 when the service user 3 receives a service from the service provider 4, and a service is received, or an article is purchased or lent based on point conversion according to the accumulated points.

Abstract: A method and apparatus for obtaining an observational image of a sample surface by scanning a charged particle beam to detect secondary charged particles given off from the sample surface. Charged particle beam focusing and astigmatism correction are performed by comparing scanning images: one image obtained from an initial adjusting value, and other images obtained from a ±&Dgr; of the initial adjusting value, wherein &Dgr; is a known predetermined selected value. The clearest image of the images is selected, and the adjusting value of the clearest image is then set as the new initial adjusting value. The entire scanning, comparison, and adjusting process is repeated until an optimal satisfactory image is obtained.

Abstract: A sample transfer apparatus has a transfer arm for supporting a sample and is mounted for undergoing movement to transfer the sample from a first station to a second station. The transfer arm has a holding portion for holding the sample by hydrogen bonding.

Abstract: A focused ion beam apparatus having an ion source, a focusing optical system and a scanning electrode scans the focused ion beam across a desired region of a sample surface to form a cross-section in which stacked conductors separated by an insulating film are exposed. To prevent charge-up of the sample due to an electrically floating nature of a conductor, a thin hole is formed using the focused ion beam to extend from one conductor to another. Etched particles are adhered to a side surface of the hole due to thin hole formation, with the result that a conductive film is formed electrically connecting the conductors. A floating conductive film is put into contact with a non-floating film to thereby avoid charge-up during observation of the sample with a charged particle beam.

Abstract: A focused ion beam machining method for etching the surface of a sample to obtain a desired profile formation portion by recurrently irradiating a focused ion beam to a desired region of the sample, wherein the recurrently scanned region is enlarged with the elapse of time during the etching and scanning of the sample with the focused ion beam is performed in parallel with the profile formation portion, and the profile formation portion is scanned after all other portions of the recurrently scanned region have been scanned.

Abstract: A method for obtaining an image of a sample surface using a charged particle beam apparatus without damaging the sample surface is performed by scanning a focused ion beam onto an observation region of the sample surface, detecting secondary charged particles emanating from the sample surface, and producing an image in response thereto. The sample is placed in a water vapor atmosphere while being scanned by the focused ion beam so that a water vapor absorption layer is formed in the observation region of the sample surface. A SIM image is obtained by placing the periphery of the portion to be processed into a water vapor atmosphere and then irradiating and scanning across the sample surface with the focused ion beam in order to prevent damage to the sample surface. In one embodiment, a focused ion beam instrument is used to observe and repair a photomask without damaging the underlying substrate or to the photomask pattern during observation.

Abstract: A high-resolution secondary ion image is observed by first and second processing steps. In the first step, the focus of the ion optics is adjusted while observing a secondary electron image at an image refresh rate of a few or several seconds. In the second step, secondary ions are detected with a secondary charged-particle detector without readjusting the focus of the ion optics. A secondary ion image is observed at a scanning rate of tens to hundreds of seconds/frame. Thus, a focused high-resolution secondary ion image is derived.

Abstract: An ion beam working apparatus which can carry out a plurality of workings with good accuracy automatically is provided. When an ion beam current is changed, by setting differences in ion beam optical conditions, working without focal point shift or working position shift becomes possible and throughput increases can be expected. Differences in ion beam optical conditions of when an ion beam current is changed are stored in a computer and when the ion beam current amount is changed midway through automatic working those stored differences in ion beam optical conditions are set in the ion beam optical system.

Abstract: To provide a focused ion beam optical axis alignment method and a focused ion beam apparatus which make axis alignment work of for example when replacing an ion source of a focused ion beam apparatus easy.

Abstract: To provide a focused ion beam optical axis alignment method and a focused ion beam apparatus which make axis alignment work of for example when replacing an ion source of a focused ion beam apparatus easy.