Abstract: A light receiving device includes a substrate, a first contact layer disposed on a surface of the substrate, a light receiving layer disposed on the first contact layer, an intermediate layer disposed on the light receiving layer, a wide-gap layer having a pn junction disposed on the intermediate layer, a second contact layer disposed on the wide-gap layer, and a groove formed for pixel isolation by removing the second contact layer and part of the wide-gap layer, wherein the intermediate layer has a wider band gap than the light receiving layer, and wherein the wide-gap layer has a wider band gap than the intermediate layer.

Abstract: A light receiving device includes a substrate, a first contact layer disposed on a surface of the substrate, a light receiving layer disposed on the first contact layer, an intermediate layer disposed on the light receiving layer, a wide-gap layer having a pn junction disposed on the intermediate layer, a second contact layer disposed on the wide-gap layer, and a groove formed for pixel isolation by removing the second contact layer and part of the wide-gap layer, wherein the intermediate layer has a wider band gap than the light receiving layer, and wherein the wide-gap layer has a wider band gap than the intermediate layer.

Abstract: An ornament clasp and an ornament that can be easily attached and detached. The ornament clasp includes a holder (10) on a fixed side having a holding portion (20) where a personal ornament main body (2) is held via an opening (21), a closing member (12) on a movable side rotatably attached to the holder via a pivotal attaching portion (28) and locking form inside the opening to cause a closed state, a soft member attached to the closing member at least on a side of gripping the personal ornament main body, and a spring (13) attached in a repulsive state between the holder and the closing member and pressing the closing member in a direction of closing the opening. A grip space S where the personal ornament main body is gripped in a repulsive direction of the spring is provided between the soft member and the holding portion.

Abstract: An ornament clasp and an ornament that can be easily attached and detached. The ornament clasp includes a holder (10) on a fixed side having a holding portion (20) where a personal ornament main body (2) is held via an opening (21), a closing member (12) on a movable side rotatably attached to the holder via a pivotal attaching portion (28) and locking form inside the opening to cause a closed state, a soft member attached to the closing member at least on a side of gripping the personal ornament main body, and a spring (13) attached in a repulsive state between the holder and the closing member and pressing the closing member in a direction of closing the opening. A grip space S where the personal ornament main body is gripped in a repulsive direction of the spring is provided between the soft member and the holding portion.

Abstract: A photodiode includes a light absorbing layer including a first superlattice structure that includes first semiconductor layers and second semiconductor layers, the first superlattice structure having a band structure sensitive to infrared light; a p-type semiconductor region; and an intermediate layer disposed between the p-type semiconductor region and the light absorbing layer, the intermediate layer having a conduction band having a bottom energy level lower than that of the p-type semiconductor region.

Abstract: An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each photodiode of the plurality includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. The third semiconductor layer and the super-lattice region are provided in common for the photodiodes of the plurality. In the photodiodes, the first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of its first mesa. Each second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.

Abstract: An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each of the plurality of photodiodes includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. Each of the third semiconductor layer and the super-lattice region is provided in common for the photodiodes. The first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of first mesa. The second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: An array type light-receiving device includes a plurality of pixels two-dimensionally arranged in a first direction and a second direction perpendicular to the first direction, each of the pixels including a light-receiving layer having a responsivity to a wavelength of light. The pixels arranged in the second direction constitute a plurality of pixel lines extending in the second direction, the plurality of pixel lines being arranged in the first direction to form an array. The pixels in each of the pixel lines have different pixel areas from each other. In addition, the pixel area of each of the pixels included in at least one of the pixel lines is determined in accordance with the responsivity to a wavelength of light received by each of the pixels.

Abstract: A method produces a light-receiving device by growing a light-receiving layer having an undoped multi-quantum well structure; growing a cap layer on the light-receiving layer while the cap layer is doped with a p-type impurity during its growth; growing a mesa structure; growing a protective film on surfaces of the mesa structure; and annealing to form a p-n junction. The mesa structure is defined by a surrounding trench. Alternatively, a selective growth mask can be formed on the light-receiving layer whereafter the cap layer is grown on the light-receiving layer by use of the mask. In the alternative, the p-n junction is formed by diffusing p-type impurity from a p-type contact layer of the cap layer through a concentration adjusting layer thereof to the light-receiving layer.

Abstract: A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. Bonded, the integrated device and the light receiving device face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with respect to the third reference plane.

Abstract: A photodiode includes a light absorbing layer including a first superlattice structure that includes first semiconductor layers and second semiconductor layers, the first superlattice structure having a band structure sensitive to infrared light; a p-type semiconductor region; and an intermediate layer disposed between the p-type semiconductor region and the light absorbing layer, the intermediate layer having a conduction band having a bottom energy level lower than that of the p-type semiconductor region.

Abstract: A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

Abstract: A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. The integrated device is bonded with the light receiving device to face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with the third reference plane.

Abstract: An array-type light-receiving device includes a substrate including a main surface, a rear surface, and a plurality of recesses formed in the rear surface, the rear surface including an incident plane on which incident light is received; a stacked semiconductor layer disposed on the main surface of the substrate, the stacked semiconductor layer including a light-receiving layer; and a plurality of pixel regions each of which includes the light-receiving layer. The plurality of recesses are each depressed from the rear surface in a thickness direction of the substrate. In addition, each of the plurality of recesses has a bottom surface and a side surface, the bottom surface facing at least one of the plurality of pixel regions, the side surface including a tapered region inclined at a predetermined inclination angle with respect to an in-plane direction of the main surface.

Abstract: Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.

Abstract: A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

Abstract: A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located within the second area at different distances from the first point. The distance from the first point to the fourth point is larger than the distance from the first point to the third point. The first thickness is larger than the second thickness. The resin layer has a surface that monotonically changes from the first thickness to the second thickness.

Abstract: A light-receiving device includes a light-receiving layer having an undoped multi-quantum well structure; a cap layer disposed on the light-receiving layer, the cap layer including a semiconductor layer doped with a p-type impurity; a mesa structure including the cap layer; a p-type region extending from the p-type semiconductor layer toward the light-receiving layer, the p-type region including the p-type impurity diffused from the semiconductor layer in the mesa structure; a p-n junction formed at an end of the p-type region; and an electrode disposed on the cap layer of the mesa structure. The mesa structure is defined by a trench surrounding the mesa. The trench has a bottom that reaches the vicinity of an upper surface of the light-receiving layer. The p-n junction is located in the light-receiving layer or at the boundary between the light-receiving layer and the cap layer disposed on the light-receiving layer.

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 ?m or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.