Abstract: Before performing a zoom in operation, a view angle candidate frame indicating an angle of view after the zoom in operation is superimposed on an input image to generate an output image. A user checks the view angle candidate frame in the output image so as to check in advance an angle of view after the zoom in operation.

Abstract: An image sensing apparatus that includes an image sensing portion outputting the image data of an image by shooting and that generates an output image based on the output data of the image sensing portion obtained in response to a predetermined shooting command has: a first correction portion which, based on the image data of a first image shot by the image sensing portion and the image data of a second image shot by the image sensing portion with an exposure time longer than the exposure time of the first image, performs position adjustment between the first and second images and then synthesizes the first and second images to generate the output image; a second correction portion which generates the output image by reducing noise in the first image without using the second image; and a correction control portion which executes selection processing to alternatively select one of the first and second correction portions based on a shooting condition set for shooting of the second image or based on the output

Abstract: A clipping set portion includes: a main object detection portion which detects a main object in an input image and generates main object position information; a clipping region set portion which sets a clipping region for the input image based on the main object position information; and a zoom information generation portion which generates zoom information based on zoom intention information from a user input via an operation portion. The zoom intention information is information which is input via the operation portion at a time of taking the input image and indicates whether or not to perform a zoom process.

Abstract: An image processing apparatus outputs an output image by synthesizing a first image obtained by shooting, a second image obtained by shooting with an exposure time longer than the exposure time of the first image, and a third image obtained by reducing noise in the first image. The image processing apparatus has a noise reduction processing control portion which controls the contents of image processing for obtaining the third image from the first image according to the noise level in the first image.

Abstract: An image sensing apparatus senses first and second images, and produces a merged image by merging the first and second images together. An exposure time for the second image is longer than an exposure time for the first image. By sensing the first image before the second image, the first image is prevented from being sensed during a camera-shake-increase period starting a long time after the input of a image-sensing-start instruction. Also, by waiting for an image-sensing standby time to elapse before sensing the first image, the first image can be sensed during a period of a particularly small camera shake.

Abstract: An object of the invention is to provide a polycrystalline thin film which includes an intermediate layer that is made thinner while keeping high crystal orientation so as to prevent warpage of a substrate resulting from internal stress of the film. A polycrystalline thin film according to the invention includes an intermediate layer formed by a first layer and a second layer laminated in this order and provided on a metal substrate. The first layer has a rock-salt crystal structure and the second layer has a fluorite crystal structure.

Abstract: A coupling device has a clip and a clip holder. A hook at a distal portion of a wiper arm is attached to the clip. The clip holder has a locking member and a cover. The cover extends along the longitudinal direction of the wiper arm. The cover has a first cover portion and a second cover portion. When the clip holder is located at an engage position where the clip holder is engaged with the clip, the second cover portion extends to connected parts of a boundary between a retainer and an arm piece.

Abstract: A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50° to 60° with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20° or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.

Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

Abstract: A heat radiating structure for an electronic device, for cooling an electronic part by transferring the heat generated in the electronic part to a heat spreader has a grading layer, which is located between the electronic part and the heat spreader and having a coefficient of thermal expansion varied such that it is substantially equal or approximate at its portion on the electronic part side to the coefficient of thermal expansion of the electronic part and such that it is substantially equal or approximate at its portion on the heat spreader side to the coefficient of thermal expansion of the heat spreader.

Abstract: A coupling device has a clip and a clip holder. A hook at a distal portion of a wiper arm is attached to the clip. The clip holder has a locking member and a cover. The cover extends along the longitudinal direction of the wiper arm. The cover has a first cover portion and a second cover portion. When the clip holder is located at an engage position where the clip holder is engaged with the clip, the second cover portion extends to connected parts of a boundary between a retainer and an arm piece.

Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

Abstract: A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0×10−2 Pa or lower while keeping the substrate temperature at 300° C. or lower.

Abstract: A heat radiating structure for an electronic device, for cooling an electronic part by transferring the heat generated in the electronic part to a heat spreader has a grading layer, which is located between the electronic part and the heat spreader and having a coefficient of thermal expansion varied such that it is substantially equal or approximate at its portion on the electronic part side to the coefficient of thermal expansion of the electronic part and such that it is substantially equal or approximate at its portion on the heat spreader side to the coefficient of thermal expansion of the heat spreader.

Abstract: A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.

Abstract: An oxide superconducting wire composed of a metal substrate, an intermediate layer vapor-deposited by an ion beam assisted deposition method (IBAD method) on the metal substrate, a CeO2 cap layer vapor-deposited on the intermediate layer by the PLD method or another such method, and an oxide superconducting film formed on the cap layer, wherein the thickness of the intermediate layer is no more than 2000 nm, and the thickness of the cap layer is at least 50 nm. The time it takes to form a film by the IBAD method can be shortened, and the orientation of the resulting superconducting film can be improved, by reducing the thickness of the intermediate layer manufactured by the IBAD method as above and increasing the thickness of the cap layer. The oxide superconducting wire can be obtained at low cost and with high critical current density.

Abstract: A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50° to 60° with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20° or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.

Abstract: The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.

Abstract: The present invention provides a tape-form oxide superconductor having a high degree of c-axis alignment and in-plane alignment and an improved Jc value. On a tape-form metal substrate which is non-magnetic or weakly magnetic and has high strength, there are sequentially formed a first intermediate layer wherein YSZ or Zr2Rx2O7 particles are deposited from a target with ion irradiation from a direction inclined to the metal substrate, a second intermediate layer of CeO2 or Y2O3 is formed and an RE1+XBa2−XCu3OY superconducting layer is formed by coating metalorganic salts containing F, followed by thermal decomposition.

Abstract: A heat radiating structure for an electronic device, for cooling an electronic part by transferring the heat generated in the electronic part to a heat spreader has a grading layer, which is located between the electronic part and the heat spreader and having a coefficient of thermal expansion varied such that it is substantially equal or approximate at its portion on the electronic part side to the coefficient of thermal expansion of the electronic part and such that it is substantially equal or approximate at its portion on the heat spreader side to the coefficient of thermal expansion of the heat spreader.