Abstract: The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Abstract: In the present invention, a thin film whose main component is a metal having a specific resistance of 4 ??·cm to 200 ??·cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.

Abstract: A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8<y<3.2.

Abstract: A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.

Abstract: In the present invention, a thin film whose main component is a metal having a specific resistance of 4 &mgr;&OHgr;·cm to 200 &mgr;&OHgr;·cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.

Abstract: A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.

Abstract: A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

Abstract: A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.

Abstract: A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.

Abstract: An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8<x<3.2; and a value t as defined by: t=(Ra+Ro)/(2·(Rb+Ro)) (where Ra, Rb and Ro denote the ion radii of the atoms A, B and O, respectively) satisfies 0.8<t<0.97.

Abstract: The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

Abstract: The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Abstract: A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

Abstract: A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8<y<3.2.

Abstract: The invention increases the electric resistance of CPP-GMR elements to a practical range. Moreover, the invention presents a CPP-GMR element and a TMR element that can be applied to track widths that are made narrower due to higher densities of the magnetic recording. The area S1 of a non-magnetic layer 7 is 1 &mgr;m or less, and at least one layer selected from a first magnetic layer 6, a second magnetic layer 8 and the non-magnetic layer 7 includes a first region 30 through which current flows and a second region 20 made of an oxide, a nitride or an oxynitride of the film constituting that first region. The area S2 of the first region is smaller than the area of the non-magnetic layer. At least one of the layers of the element is oxidized, nitrided or oxynitrided from a lateral side.

Abstract: A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

Abstract: An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8<x<3.

Abstract: The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

Abstract: A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

Abstract: An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8<x<3.2; and a value t as defined by: t=(Ra+Ro)/({square root over (2)}·(Rb+Ro)) (where Ra, Rb and Ro denote the ion radii of the atoms A, B and O, respectively) satisfies 0.8<t<0.97.