Abstract: A sodium ion secondary battery that has high discharge capacity, excellent cycling characteristics, and excellent storage characteristics is provided. The present disclosure includes a carbonaceous material for a sodium ion secondary battery negative electrode. The carbon source of the carbonaceous material is a plant, and the carbonaceous material has a BET specific surface area of 100 m2/g or less.

Abstract: A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.

Abstract: A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Abstract: A tank includes a liner and a reinforcement layer. The liner has a body portion with a cylindrical shape, and a pair of dome-shaped portions respectively provided at both ends of the body portion in an axial direction of the body portion. The reinforcement layer covers the liner and is made of a fiber reinforced resin that is a resin-impregnated fiber bundle. The reinforcement layer includes a part reinforcement layer disposed from an apex side of each of the dome-shaped portions across a boundary between the dome-shaped portion and the body portion to part of the body portion, and an outer hoop layer disposed outside the part reinforcement layer and provided so as to press an end, adjacent to the body portion, of the part reinforcement layer.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: An imaging device comprises pixels. The pixel includes first semiconductor regions of a first conductivity type provided in a surface part of a semiconductor substrate and a second semiconductor region of a second conductivity type provided in the surface part of the semiconductor substrate between the first semiconductor regions. The pixel includes: a light-receiving unit in which photodiodes each configured between the second semiconductor region and one of the first semiconductor regions; quenching circuits, each connected to a corresponding one of the first semiconductor regions; and a counter unit connected to each of connection nodes between the first semiconductor regions and the quenching circuits and counts a pulse generated in response to a photon being incident on the light-receiving unit. The second semiconductor region is provided across a deeper part of the semiconductor substrate than the first semiconductor regions.

Abstract: A fixing belt includes a base member containing a metal, a sliding layer containing a filler and formed on a base member inner side, and a separation layer formed on a base member outer side. Assume that (i) a sliding layer cross section is obtained by cutting the sliding layer along a sliding layer thickness direction and is divided into sections each having a length that is the same as a sliding layer thickness in a direction perpendicular to the thickness direction, and (ii) a ratio of a filler area to a sliding layer area in each cross section sections is an area ratio. A period coefficient is calculated using the formula (Ave %?Min %)/Ave %, where an average of area ratios of filler areas in all the sections is Ave % and a minimum of the area ratios is Min %, and the calculated period coefficient is 0.6 or more.

Abstract: According to one embodiment, a nitride semiconductor device includes a first semiconductor layer having a heterojunction, a second semiconductor layer on the first semiconductor layer and having another heterojunction, a drain electrode on the second semiconductor layer, a source electrode provided on the first semiconductor layer, a gate electrode provided on the first semiconductor layer between the drain electrode and the source electrode, and a first insulating film between the gate electrode and the drain electrode covering the first semiconductor layer and the second semiconductor layer. The second semiconductor layer being separated from the gate electrode by a portion of the insulating film. A distance from the second semiconductor layer to the gate electrode is shorter than a distance from the drain electrode to the gate electrode.

Abstract: A sample scraping method and a sample scraping device capable of efficiently scraping and collecting a biological tissue section without waste while suppressing contamination is provided. In a sample scraping method for scraping and collecting a biological tissue section held on a slide, the FFPE section held on the slide is heated, and the heated FFPE section is scraped by a blade such that the FFPE section that has been scraped off and remains on the blade is collected in a container.

Abstract: A driving control system 1 includes a camera unit 11 and a transceiver 18 which are mounted to a vehicle 5. The driving control system 1 also includes a transceiver 74, an information recognition_ECU 72 which recognizes road traffic information based on first road traffic detection information received by the transceiver 74 through the transceiver 18, and a traveling_ECU 73 which computes control information for the vehicle 5 based on the road traffic information, which are provided to a traffic control apparatus 70 disposed in each predetermined traffic control area. The driving control system 1 also includes an E/G_ECU 23, a PS_ECU 24, and a BK_ECU 25 which are mounted to the vehicle 5 and execute driving control based on the control information received by the transceiver 18 through the transceiver 74.

Abstract: Provided is a scintillator panel with reduced deterioration in brightness due to irradiation and higher brightness. A scintillator panel including a substrate and a scintillator layer containing phosphors, in which the scintillator layer includes a binder resin having a ?-conjugated structure composed of seven or more atoms; in which the glass transition temperature of the binder resin is from 30 to 430° C.; and the thickness of the scintillator layer is from 50 to 800 ?m.

Abstract: A display device includes an image display unit, a display case, and a heat insulating part. The image display unit has a display surface that displays an image and a display back surface opposite to the display surface. The display case has a case opposing surface opposing the display back surface and covering the display back surface. The heat insulating part is disposed between the display back surface and the case opposing surface to restrict heat from transferring from the display case to the image display unit. The heat insulating part being elastically deformed or flexibly stretched and deformed in accordance with a relative displacement of the image display unit with respect to the display case. The image display unit is fixed to the case opposing surface through the heat insulating part.

Abstract: Disclosed is a scintillator panel comprising a substrate, a grid-like barrier rib formed on the substrate, a phosphor layer in cells divided by the barrier rib, and a reflective layer surrounding the side and the bottom of the phosphor layer, the scintillator panel comprising a part where the reflective layer surrounding the side of the phosphor layer is curved and a part where opposing surfaces of the reflective layer at the side of the phosphor layer are approximately parallel, wherein a ratio in a width direction of a part where the reflective layer at the bottom of the phosphor layer is curved to a part where the reflective layer at the bottom of the phosphor layer is flat is 10.0:0 to 1.0:9.0. The brightness of the scintillator panel is improved.

Abstract: A display device for a vehicle includes: an irradiation unit configured to irradiate a display light for an occupant of the vehicle to display an image; and a storage unit housing the irradiation unit so as to expose a display screen to which the display light is irradiated. The storage unit has an air intake port to take in air and an air discharge port to discharge the air. The display device includes a confluence portion configured to merge a first exhaust air discharged from the air discharge port and a second exhaust air discharged from an air conditioner for a cabin of the vehicle through an air outlet arranged in the cabin. The confluence portion is defined such that a first flow direction of the first exhaust air and a second flow direction of the second exhaust air coincide with each other.

Abstract: A display device for a vehicle includes: an irradiation unit configured to irradiate a display light for an occupant of the vehicle to display an image; and a storage unit housing the irradiation unit so as to expose a display screen to which the display light is irradiated. The storage unit has an air intake port to take in air and an air discharge port to discharge the air. The display device includes a confluence portion configured to merge a first exhaust air discharged from the air discharge port and a second exhaust air discharged from an air conditioner for a cabin of the vehicle through an air outlet arranged in the cabin. The confluence portion is defined such that a first flow direction of the first exhaust air and a second flow direction of the second exhaust air coincide with each other.

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability, where the n-type semiconductor element includes a second insulating layer, where the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R1, R2, R3, or R4 in the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

Abstract: A driving behavior evaluation device, includes: a memory; and a processor coupled to the memory, the processor being configured to: acquire onboard sensor information that is detected by a sensor installed in a vehicle and that includes a depression amount of an accelerator pedal, acquire map information including information regarding an intersection, and in a case in which an event has been detected, render a lower driving evaluation than in a case in which the event is not detected, the event being an event in which the depression amount of the accelerator pedal increases or decreases at least once within a predetermined time after the vehicle has arrived at a temporary stop position, or has temporarily stopped, at the intersection.

Abstract: A biological information detection device includes: a needle body configured to pierce the living body; and a sensor that has an elongated shape and is configured to detect biological information using a distal end portion of the sensor that is configured to indwell inside a living body. The distal end portion of the sensor is insertable into the living body by moving along the needle body after the needle body has pierced the living body.