Abstract: In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.

Abstract: A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.

Abstract: A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.

Abstract: In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.

Abstract: A method for improving the productivity when a single crystal is pulled while being mechanically held at a knob section formed at an upper end of the crystal. By controlling the crucible rotational speed, a reproducible knob section having a complex shape can be formed in a more time efficient manner than if the knob section were formed by controlling the temperature of the heater.

Abstract: A silicon single crystal producing apparatus and method are disclosed. Contamination of a hot molten liquid due to a chuck mechanism is prevented where an upper end part of the silicon single crystal is gripped by the chuck mechanism and is raised after the silicon single crystal is produced. Elevation and rotation of the chuck mechanism can be controlled independently of elevation and rotation of a pulling wire. Before the upper end part of the silicon single crystal is gripped at a bottom part of a pull chamber, the chuck mechanism is set at a standby position at a top of the pull chamber. The chuck mechanism is lowered from the standby position to the grip position. A rotation frequency of the chuck mechanism during lowering is selected as a rotation frequency free of resonance. After lowering and gripping of the silicon single crystal, the chuck mechanism is raised while being rotated in synchronism with the pulling wire.