Abstract: Provided are a high-yield-ratio high-strength galvanized steel sheet and a method for manufacturing thereof. The high-yield-ratio high-strength galvanized steel sheet has a steel sheet having a specified chemical composition and a metallographic structure including, in terms of area ratio, in terms of area ratio, 15% or less of ferrite, 20% or more and 50% or less of martensite, and bainite and tempered martensite in a total amount of 30% or more, and a galvanized layer formed on the steel sheet having a coating weight of 20 g/m2 to 120 g/m2 per side, in which a yield strength ratio is 65% or more, a tensile strength is 950 MPa or more, and Mn oxides are contained in the galvanized layer in an amount of 0.015 g/m2 to 0.050 g/m2.

Abstract: Provided are a high-yield-ratio high-strength galvanized steel sheet that includes a Mn-containing steel sheet serving as a base material, and a production method therefor. The high-yield-ratio high-strength galvanized steel sheet includes a steel sheet having a specific composition and a metallographic structure including, by area percentage, 20% or less ferrite, 40% or more in total of bainite and tempered martensite, and 60% or less as-quenched martensite, the bainite having an average grain size of 6.0 ?m or less, and a coated layer arranged on the steel sheet, the coated layer having a coating weight per side of 20 to 120 g/m2 and having a Mn content of 0.05 g/m2 or less, in which the high-yield-ratio high-strength galvanized steel sheet has a yield ratio of 65% or more and a tensile strength of 950 MPa or more.

Abstract: In an image forming apparatus, a cleaning portion has a discharge pipe that guides toner that has been collected from a peripheral surface of a photoreceptor drum as waste toner to the outside of a process unit. The discharge pipe is drawn from a side surface of the process unit and includes at a tip portion a discharge port that discharges the waste toner. A restricting portion is arranged on a side surface of the discharge pipe, between a position corresponding to an insertion port and the discharge port, and restricts a flow of air moving from the discharge port to the insertion port. The insertion port is provided on a same surface as the side surface of the process unit from which the discharge pipe is drawn. And the insertion port is configured to be inserted by a cleaning tool for the electrode.

Abstract: An image forming apparatus that includes a charger for charging a surface of a photoreceptor and that forms an image by using an electrophotographic system, the charger being configured to be cleanable, includes a guidance notification unit that causes a guidance notification prompting cleaning of the charger to be displayed and a guidance notification determination unit that, in accordance with a threshold set in accordance with usage condition of the image forming apparatus, determines whether or not to cause the guidance notification to be displayed.

Abstract: In order to improve the performance of a semiconductor device, a p type impurity is ion implanted into an area of an n type semiconductor film that is epitaxially grown over a p type semiconductor substrate, and the p type impurity is not ion implanted into an area of the n type semiconductor film, which is adjacent to the area in which the p type impurity is ion implanted. In this way, a p? type drift layer comprised of the area in which the p type impurity is introduced, as well as an n? type semiconductor region comprised of the area in which the p type impurity is not introduced are formed.

Abstract: In order to improve the performance of a semiconductor device, a p type impurity is ion implanted into an area of an n type semiconductor film that is epitaxially grown over a p type semiconductor substrate, and the p type impurity is not ion implanted into an area of the n type semiconductor film, which is adjacent to the area in which the p type impurity is ion implanted. In this way, a p? type drift layer comprised of the area in which the p type impurity is introduced, as well as an n? type semiconductor region comprised of the area in which the p type impurity is not introduced are formed.

Abstract: A configuration for realizing time synchronization between different protocols is provided. There is provided a control device that constitutes a control system for controlling machines or facilities. The control device includes first communication means configured to transmit and receive data in accordance with a first protocol. The first communication means includes a first timer that defines a time of data transmission and is time-synchronized with an entity to and from which data is transmitted and received. The control device includes second communication means configured to transmit and receive data in accordance with a second protocol different from the first protocol. The second communication means includes a second timer that defines a time of data transmission and is time-synchronized with an entity to and from which data is transmitted and received. The control device includes synchronization means configured to time-synchronize the first timer and the second timer.

Abstract: An arithmetic device and a control apparatus capable of executing a process according to an event occurring in one or more functional units connected through a communication circuit are provided. The arithmetic device configuring the control apparatus includes: a communication circuit for exchanging data with the functional units through the communication line; a processor for executing at least one of an arithmetic processing using data acquired from the functional units and a generation processing of data to be transmitted to the functional units; and a monitoring circuit connected to the communication circuit and the processor, and includes: a detection unit that detects an event occurring in the arithmetic device; a storage unit that stores a message associated with each event; and a start unit that gives an instruction to the communication circuit in accordance with the detected event to transmit a message associated with the detected event.

Abstract: A new configuration for transmitting and receiving multiple types of data having different characteristics using a common communication line is provided. An arithmetic operation device configuring a control apparatus includes: a communication circuit exchanging data with one or multiple functional units through a communication line; a processor that executes a first process used for issuing a first request for transmitting or receiving data through the communication line in every period set in advance and a second process of issuing a second request for transmitting data through the communication line when a condition set in advance is satisfied; and a control circuit that starts to operate the communication circuit in response to the first request and the second request issued by the processor. The control circuit includes a unit that sets a prohibition period in which the second request is invalidated in association with an execution period of the first process.

Abstract: An arithmetic operation device configuring a control apparatus includes: a communication circuit that is used for exchanging data with functional units through a communication line; a processor that is used for executing a user program executing at least one of an arithmetic operation process using data acquired from the functional units and a generating process of data to be transmitted to the functional units; and a monitoring circuit that is connected to the communication circuit and the processor. The monitoring circuit gives a notification from the communication circuit to the functional units on the basis of at least one of detection of shutoff of power supplied to the arithmetic operation device and reception of a preliminary notification before the shutoff of the power supplied to the arithmetic operation device, and the notification is used for executing a process according to shutoff of power supply to the arithmetic operation device.

Abstract: A high-strength steel sheet having a tensile strength of at least 780 MPa and excellent punchability comprises a ferrite phase, a martensite phase, and a bainite phase. The area ratio of the martensite phase is 20%-50%; the area ratio of crystal grains having an average crystal grain diameter of less than 1.0 ?m in the martensite phase is 5%-30%; the area ratio of crystal grains having an average crystal grain diameter of 1.0-4.0 ?m is 70%-95%; and the area ratio of crystal grains having an average crystal grain diameter of more than 4.0 ?m is less than 5%.

Abstract: According to an embodiment, semiconductor device 1 includes: a drift layer 12 of a first conductivity type; a base layer 13 of a second conductivity type; a source layer 30 of the first conductivity type; a gate trench 21 penetrating the source layer 30 and the base layer 13, and reaching the drift layer 12; a gate electrode 20 and a gate insulating film disposed inside the gate trench 21; an interlayer insulating film 42; a contact hole 43 penetrating the interlayer insulating film 42, the source layer 30, and the base layer 13, and reaching the drift layer 12; a snubber conductive layer 50 disposed in a lower part of the contact hole 43; a snubber sidewall insulating film 55 disposed between a side surface of the snubber conductive layer 50 and the drift layer 12; and a contact 41 disposed above the snubber conductive layer 50 in the contact hole 43 and connected to the source layer 30.

Abstract: A high-strength steel sheet having excellent punchability and a tensile strength of at least 780 MPa has a steel structure containing, by area ratio, 70%-90% ferrite phase and 10%-30% martensite phase. The non-recrystallized ferrite content in the ferrite phase is 30%-50% and the ratio of crystal grains having an aspect ratio of 1.0-1.5 in the martensite phase is 40%-100%, by area ratio.

Abstract: An image forming apparatus that includes a charger for charging a surface of a photoreceptor and that forms an image by using an electrophotographic system, the charger being configured to be cleanable, includes a guidance notification unit that causes a guidance notification prompting cleaning of the charger to be displayed and a guidance notification determination unit that, in accordance with a threshold set in accordance with usage condition of the image forming apparatus, determines whether or not to cause the guidance notification to be displayed.

Abstract: A current is supplied from a power source voltage supply node of a power source voltage to an open-collector of a transistor through a current blocking circuit, connectors and a signal transmission line. A microcomputer regulates a resistance value of a pull-up resistor by switching over an on/off state of a switch circuit in accordance with the power source voltage detected by a power source voltage detection circuit. The microcomputer thus regulates a current blocking rate of the current blocking circuit.

Abstract: A semiconductor device SD includes a substrate SUB, a plurality of gate electrodes GE, a gate pad GEP, and gate interconnects GINC. The plurality of gate electrodes GE are formed in the substrate SUB, and extend electrically in parallel to each other. The gate pad GEP is formed in a region different from that in which the plurality of gate electrodes GE are formed in the substrate SUB. Each of a plurality of gate interconnects GINC connects the plurality of gate electrodes GE to the gate pad GEP.

Abstract: To provide a charging device which can be reduced in size and increased in speed while suppressing the occurrence of charging irregularities on the surface of the photosensitive drum, a process cartridge, and an image forming apparatus.

Abstract: A current is supplied from a power source voltage supply node of a power source voltage to an open-collector of a transistor through a current blocking circuit, connectors and a signal transmission line. A microcomputer regulates a resistance value of a pull-up resistor by switching over an on/off state of a switch circuit in accordance with the power source voltage detected by a power source voltage detection circuit. The microcomputer thus regulates a current blocking rate of the current blocking circuit.

Abstract: In an image forming apparatus, a cleaning portion has a discharge pipe that guides toner that has been collected from a peripheral surface of a photoreceptor drum as waste toner to the outside of a process unit. The discharge pipe is drawn from a side surface of the process unit and includes at a tip portion a discharge port that discharges the waste toner. A restricting portion is arranged on a side surface of the discharge pipe, between a position corresponding to an insertion port and the discharge port, and restricts a flow of air moving from the discharge port to the insertion port. The insertion port is provided on a same surface as the side surface of the process unit from which the discharge pipe is drawn. And the insertion port is configured to be inserted by a cleaning tool for the electrode.

Abstract: To provide a charging device which can be reduced in size and increased in speed while suppressing the occurrence of charging irregularities on the surface of the photosensitive drum, a process cartridge, and an image forming apparatus.