Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: A power source circuit for a high frequency power amplifying circuit, that can be used for a portable telephone of the GSM or WCDMA and a portable telephone capable of performing communications in two or more communication systems such as the GSM and CDMA. The power source circuit is constructed by a first direct current power source circuit such as a series regulator whose power efficiency is not high but which reaches a high level quickly, and a second direct current power source circuit such as a switching regulator, which does not reach the high level quickly but whose power efficiency is high. When the power source voltage has to reach the high level at high speed, both of the series regulator and the switching regulator are simultaneously operated. When the output power source voltage reaches a predetermined level, the operation of the series regulator is stopped.

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: There are provided an electronic component for high frequency power amplification provided with a high-sensitivity output power detection circuit which is immune to the influence of changes in the use environment thereof, free of an output mismatch, small in size, and low in insertion loss and a wireless communication system using the electronic component.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A directional coupler for detecting an output of a high frequency circuit module includes a main line and a sub-line overlapped with the main line with a dielectric material. The sub-line is set, in width, narrower than the main line and both side edges of the sub-line are allocated at the internal side of both side edges of the main line. Accordingly, the sub-line is surely provided opposed to the main line in the total width area and a signal current flowing into the main line can be detected in higher accuracy. Therefore, a wireless communication system for controlling an output of the high frequency circuit module by including such directional coupler assures stable communication.

Abstract: A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit.

Abstract: The invention realizes a power source circuit for a high frequency power amplifying circuit, which achieves excellent responsiveness of output voltage, can be used for a portable telephone of the GSM or WCDMA and a portable telephone capable of performing communications in two or more communication systems such as the GSM and CDMA and, moreover, has high power efficiency. A power source circuit for a high frequency power amplifying circuit is constructed by using both a first direct current power source circuit such as a series regulator whose power efficiency is not high but which becomes the high level quickly, and a second direct current power source circuit such as a switching regulator, which does not become the high level quickly but whose power efficiency is high. When the power source voltage has to become the high level at high speed, both of the series regulator and the switching regulator are simultaneously operated.