Patents by Inventor Yasuhiro Oura
Yasuhiro Oura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7846252Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.Type: GrantFiled: October 24, 2007Date of Patent: December 7, 2010Assignee: Sumco CorporationInventors: Shigeru Umeno, Yasuhiro Oura, Koji Kato
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Patent number: 7615467Abstract: This method for manufacturing an SOI wafer includes: a step of subjecting a mirror-polished active layer wafer to a rapid thermal annealing treatment; a step of forming insulating films in a front surface and a rear surface of the active layer wafer; a step of bonding the active layer wafer and a support wafer with the insulating film therebetween so as to form a bonded wafer; a step of loading the bonded wafer on a wafer boat in a state such that a portion of the active layer wafer is in contact with the wafer boat, and then subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer in the bonded wafer; and a step of thinning a portion of the active layer wafer.Type: GrantFiled: November 30, 2005Date of Patent: November 10, 2009Assignee: Sumco CorporationInventors: Takaaki Shiota, Yasuhiro Oura
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Patent number: 7582540Abstract: This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the insulating film in the front surface of the active layer wafer; a step of subjecting the active layer wafer to a rapid thermal annealing process; a step of bonding the active layer wafer and a support wafer with the insulating film formed in the rear surface therebetween so as to form a bonded wafer; a step of subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer; and a step of thinning the active layer wafer in the bonded wafer so as to form an SOI layer.Type: GrantFiled: November 30, 2005Date of Patent: September 1, 2009Assignee: Sumco CorporationInventors: Takaaki Shiota, Yasuhiro Oura
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Publication number: 20080102287Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.Type: ApplicationFiled: October 24, 2007Publication date: May 1, 2008Applicant: Sumco CorporationInventors: Shigeru Umeno, Yasuhiro Oura, Koji Kato
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Patent number: 7344689Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.Type: GrantFiled: June 7, 2006Date of Patent: March 18, 2008Assignee: Sumco CorporationInventors: Shigeru Umeno, Yasuhiro Oura, Koji Kato
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Publication number: 20070000427Abstract: A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.Type: ApplicationFiled: June 7, 2006Publication date: January 4, 2007Inventors: Shigeru Umeno, Yasuhiro Oura, Koji Kato
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Publication number: 20060121696Abstract: This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the insulating film in the front surface of the active layer wafer; a step of subjecting the active layer wafer to a rapid thermal annealing process; a step of bonding the active layer wafer and a support wafer with the insulating film formed in the rear surface therebetween so as to form a bonded wafer; a step of subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer; and a step of thinning the active layer wafer in the bonded wafer so as to form an SOI layer.Type: ApplicationFiled: November 30, 2005Publication date: June 8, 2006Applicant: Sumco CorporationInventors: Takaaki Shiota, Yasuhiro Oura
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Publication number: 20060121692Abstract: This method for manufacturing an SOI wafer includes: a step of subjecting a mirror-polished active layer wafer to a rapid thermal annealing treatment; a step of forming insulating films in a front surface and a rear surface of the active layer wafer; a step of bonding the active layer wafer and a support wafer with the insulating film therebetween so as to form a bonded wafer; a step of loading the bonded wafer on a wafer boat in a state such that a portion of the active layer wafer is in contact with the wafer boat, and then subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer in the bonded wafer; and a step of thinning a portion of the active layer wafer.Type: ApplicationFiled: November 30, 2005Publication date: June 8, 2006Applicant: SUMCO CORPORATIONInventors: Takaaki Shiota, Yasuhiro Oura
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Patent number: 4925515Abstract: A method for applying a protective tape on a wafer and cutting it out to the shape of the wafer in the process of manufacture of integrated circuits and the like, and an apparatus for use in carrying out the method. The method enables the protective tape to be applied on the wafer without allowing intersurface inclusion of air bubbles and to be accurately cut along the perimeter of the wafer. Any dimensional change with respect to the wafer can be properly coped with.The protective tape, as drawn out from a winder shaft, is applied by means of an application roller on the wafer which is supported and fixed in position on a transfer table.The tape is cut along an orientation flat of the wafer by a subcutter which is in movement integrally with the application roller. A main cutter positioned above the wafer is then lowered and caused to swivel, whereby the protective tape is cut along a circumferential edge of the wafer so that the tape on the wafer is cut out to the contour of the wafer.Type: GrantFiled: November 9, 1988Date of Patent: May 15, 1990Assignees: Takatori Corporation, Takatori Hitech Co., Ltd.Inventors: Yoshitaka Yoshimura, Yasuhiro Oura