Abstract: Provided are a light receiving element and an electronic apparatus that prevent generation of a false signal due to light emission caused by a circuit. The light receiving element includes a plurality of pixels. Each of the plurality of pixels includes: a photoelectric conversion layer that photoelectrically converts incident light; a signal reading circuit including an in-pixel transistor that is provided on a side opposite to a light incident side surface of the photoelectric conversion layer, amplifies signal charge generated by the photoelectric conversion layer, and reads the signal charge out of a pixel array; and a metal junction that bonds the photoelectric conversion layer and the signal reading circuit. The metal junction covers the in-pixel transistor when viewed from the light incident side surface of the photoelectric conversion layer.

Abstract: A photodetection device includes: a photoelectric conversion layer provided in a first substrate; a diffusion region provided in a second substrate attached to the first substrate, the diffusion region storing electric charge resulting from photoelectric conversion at the photoelectric conversion layer; and a coupling section having a multilayer structure including a via and a wiring layer, the coupling section being provided to extend from the first substrate to the second substrate and electrically coupling the photoelectric conversion layer and the diffusion region. The coupling section is provided in a manner in which, as viewed in a plane from a direction normal to a principal surface of each of the first substrate and the second substrate, a plane region of each layer is included in a plane region of a layer that is largest in plane region.

Abstract: A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.

Abstract: To reduce power consumption in a solid-state image sensor that measures a time. The solid-state image sensor includes a count unit, a count control unit, a clock unit, and an estimation unit. The count unit counts the number of times a photon has been incident within a predetermined exposure period, and outputs a count value. The count control unit performs control to stop the count unit and performs a request of time information in a case where the count value has reached a predetermined value before the predetermined exposure period elapses. The clock unit measures a time and outputs the time information in response to the request. The estimation unit estimates the number of incident times of a photon within the predetermined exposure period on the basis of the output time information.

Abstract: To reduce power consumption in a solid-state image sensor that measures a time. The solid-state image sensor includes a count unit, a count control unit, a clock unit, and an estimation unit. The count unit counts the number of times a photon has been incident within a predetermined exposure period, and outputs a count value. The count control unit performs control to stop the count unit and performs a request of time information in a case where the count value has reached a predetermined value before the predetermined exposure period elapses. The clock unit measures a time and outputs the time information in response to the request. The estimation unit estimates the number of incident times of a photon within the predetermined exposure period on the basis of the output time information.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus, in which the number of wires controlling readout can be reduced in a case where a pixel signal of each pixel is read out in a predetermined order for each unit pixel region. The unit pixel region is configured by a plurality of pixels arranged in an array. A readout circuit is provided for each unit pixel region and reads out, in a predetermined order, pixel signals of the plurality of pixels configuring the unit pixel regions. Pixel drive wires, which control readout of the pixels configuring the unit pixel regions adjacent in the vertical direction and having the same readout order, are shared. The present disclosure can be applied to, for example, a CMOS image sensor and the like.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus, in which the number of wires controlling readout can be reduced in a case where a pixel signal of each pixel is read out in a predetermined order for each unit pixel region. The unit pixel region is configured by a plurality of pixels arranged in an array. A readout circuit is provided for each unit pixel region and reads out, in a predetermined order, pixel signals of the plurality of pixels configuring the unit pixel regions. Pixel drive wires, which control readout of the pixels configuring the unit pixel regions adjacent in the vertical direction and having the same readout order, are shared. The present disclosure can be applied to, for example, a CMOS image sensor and the like.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.

Abstract: While realizing a broad dynamic range, the present technology relates to a solid-state image pickup device and control method therefor, and electronic apparatus aiming at enabling an influence of PLS to be suppressed. The solid-state image pickup device includes a pixel array unit in which a plurality of pixels are arrayed. A portion of pixels in the pixel array unit are a unit pixel at least having one photoelectric conversion element and over flow integration capacitor. Further, the solid-state image pickup device includes one AD converter for one or more unit pixels in the pixel array unit. The present technology is applicable to, for example, the solid-state image pickup.