Patents by Inventor Yasuhito Gotoh

Yasuhito Gotoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion beam irradiation device and method for suppressing ion beam divergence
    Patent number: 8461548
    Abstract: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: June 11, 2013
    Assignees: Nissin ION Equipment Co., Ltd., Kyoto University
    Inventors: Dan Nicolaescu, Shigeki Sakai, Junzo Ishikawa, Yasuhito Gotoh
  • ION BEAM IRRADIATION DEVICE AND METHOD FOR SUPPRESSING ION BEAM DIVERGENCE
    Publication number: 20120085918
    Abstract: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.
    Type: Application
    Filed: April 27, 2010
    Publication date: April 12, 2012
    Applicants: KYOTO UNIVERSITY, NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Dan Nicolaescu, Shigeki Sakai, Junzo Ishikawa, Yasuhito Gotoh
  • Ion beam irradiating apparatus, and method of producing semiconductor device
    Patent number: 7935944
    Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from ?15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is ?).
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: May 3, 2011
    Assignees: Kyoto University, Nissin Ion Equipment Co., Ltd.
    Inventors: Junzo Ishikawa, Dan Nicolaescu, Yasuhito Gotoh, Shigeki Sakai
  • ION BEAM IRRADIATING APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    Publication number: 20090203199
    Abstract: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from ?15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is ?).
    Type: Application
    Filed: June 12, 2007
    Publication date: August 13, 2009
    Applicants: KYOTO UNIVERSITY, NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Junzo Ishikawa, Dan Nicolaescu, Yasuhito Gotoh, Shigeki Sakai